Manufacture of semiconductor device

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	Manufacture of semiconductor device
其他题名	Manufacture of semiconductor device
	ITOU MICHIHARU; YOSHIKAWA MITSUO; HAMASHIMA SHIGEKI; UEDA TOMOSHI
	1982-11-19
专利权人	FUJITSU KK
公开日期	1982-11-19
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent the evaporation of a component, which is easily evaporated, from a crystal layer grown in epitaxial form by forming a semiconductor crystal onto a semiconductor substrate, contacting a liquid reservoir receiving the liquid phase of boron oxide with the crystal and coating the crystal with boron oxide. CONSTITUTION:A liquid reservoir 23 receiving the liquid phase 22 of cadmium telluride mercury and the liquid reservoir 25 receiving the liquid phase 24 of boron oxide are formed to a sliding member 21, the substrate 27 in cadmium telluride is buried into a supporting base 26, these are inserted into a reaction pipe, and heated, and the insides of the liquid reservoirs 23, 25 are changed into liquid phases. The sliding member 21 is moved, the liquid reservoir 23 is settled onto the cadmium telluride substrate 27, the crystal layer of cadmium telluride mercury is grown onto the substrate 27 in epitaxial form, the sliding member 21 is further moved, the liquid reservoir 25 is settled onto the substrate 27, and the crystal layer of cadmium telluride mercury is coated with the crystal of boron oxide.
其他摘要	用途：通过在半导体衬底上形成半导体晶体，使接收氧化硼液相的液体容器与晶体接触，从而防止容易蒸发的元件从外延形式生长的晶体层蒸发含氧化硼的晶体。组成：接收碲化镉汞液相22的液体储存器23和接收氧化硼液相24的储液器25形成一个滑动件21，碲化镉中的基板27埋入支撑基座26，将它们插入反应管中并加热，并将液体贮存器23,25的内部变为液相。使滑动构件21移动，将液体贮存器23放置在碲化镉基板27上，以外延形式将碲化镉汞晶体层生长到基板27上，使滑动构件21进一步移动，液体贮存器25为沉积在基板27上，并且用氧化硼晶体涂覆碲化镉汞晶体层。
申请日期	1981-05-15
专利号	JP1982188829A
专利状态	失效
申请号	JP1981073807
公开（公告）号	JP1982188829A
IPC 分类号	H01L21/208 \| H01L21/368 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/79334
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	ITOU MICHIHARU,YOSHIKAWA MITSUO,HAMASHIMA SHIGEKI,et al. Manufacture of semiconductor device. JP1982188829A[P]. 1982-11-19.

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