Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser | |
其他题名 | Semiconductor laser |
MITSUNARI TOSHIHIRO; MURAKAMI ATSUSHI | |
1985-05-08 | |
专利权人 | NIPPON DENKI KK |
公开日期 | 1985-05-08 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To obtain the titled device of high reliability by a method wherein the cap layer of a semiconductor laser chip is removed in stripe form, and an epitaxial layer of the reverse conductivity type to that of the cap layer is superposed, resulting in providing a current path. CONSTITUTION:The cap layer 16 is removed down to the second clad layer 15 in stripe form, and the epitaxial layer (second cap layer) 18 of the same conductivity type as that of the layer 15 is formed. At this time, since the layers 18 and 16 are different in the conductivity type, and the layers 18 and 15 are the same in the conductivity type, the current increases in the density because of no expansion with the layer 18 as its path. This construction enables the avoidance of the deterioration of the active layer due to diffusion. The active layer 14 can be isolated from an adhesion surface 17 by sufficient thickening of the layer 18, and the deterioration of the active layer due to stress application and solder creep-up can be prevented at the time of chip mounting; accordingly the titled device of high reliability can be obtained. |
其他摘要 | 目的:通过一种方法获得高可靠性的标题器件,其中半导体激光器芯片的盖层以条形形式被去除,并且反向导电类型的外延层与盖层的外延层叠加,从而提供当前的道路。组成:盖层16以条纹形式向下移除到第二包层15,并形成与层15的导电类型相同的外延层(第二盖层)18。此时,由于层18和16的导电类型不同,并且层18和15的导电类型相同,所以电流的密度增加,因为层18不作为其路径而膨胀。这种结构能够避免由于扩散引起的有源层的劣化。通过层18的充分增厚,有源层14可以与粘合表面17隔离,并且在芯片安装时可以防止由于施加应力和焊料蠕变引起的有源层的劣化。因此,可以获得具有高可靠性的标题装置。 |
申请日期 | 1983-10-07 |
专利号 | JP1985080288A |
专利状态 | 失效 |
申请号 | JP1983188186 |
公开(公告)号 | JP1985080288A |
IPC 分类号 | H01S5/00 | H01S5/223 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/79258 |
专题 | 半导体激光器专利数据库 |
作者单位 | NIPPON DENKI KK |
推荐引用方式 GB/T 7714 | MITSUNARI TOSHIHIRO,MURAKAMI ATSUSHI. Semiconductor laser. JP1985080288A[P]. 1985-05-08. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1985080288A.PDF(112KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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