Semiconductor light emitting device

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	Semiconductor light emitting device
其他题名	Semiconductor light emitting device
	IEJI HIROYUKI
	1988-06-13
专利权人	RICOH CO LTD
公开日期	1988-06-13
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To shorten the light emitting wavelength by using a mixed crystal semiconductor of II-IV compound semiconductors as an N-type clad layer, and using a mixed crystal semiconductor of I-III-VI2 compound semiconductors as the p-type clad layer and an active layer. CONSTITUTION:III-V compound semiconductor GaP or II-IV compound semiconductor ZnS, IV semiconductor Si is used as a substrate 1, and ZnS or ZnxCd1-x, SySe1-y (0<=x<=0<=y<=1) as an n-type clad layer 2, CuGa (SySe1-y)2 (0.48<=y<=0.88) or CuGaxAl1-x (SySe1-y)2 (0<=x<=0<=y<=1) as an active layer 3, CuAl(SySe1-y)2 (0.5<=y<=0.9) or CuGaxAl1-x (SySe1-y)2 (0<=x<=0<=y<=1) as a P-type clad layer 4, a P-type GaP as a cap layer 5, an insulating layer 6, and a P-type electrode 7 are sequentially formed on the substrate, and an n-type electrode 8 is formed on the rear surface of the substrate Thus, I-III-IV2 compound semiconductor to be easily formed in a P-type is used in a semiconductor laser structure to increase the sensitivity with respect to a photosensitive material by increasing the wavelength, thereby improving the scanning speed and the resolution.
其他摘要	目的：通过使用II-IV化合物半导体的混晶半导体作为N型包层，并使用I-III-VI2化合物半导体的混晶半导体作为p型包层来缩短发光波长，并且活动层。组成：III-V化合物半导体GaP或II-IV化合物半导体ZnS，IV半导体Si用作衬底1，和ZnS或ZnxCd1-x，SySe1-y（0 <= x <= 0 <= y <= 1 ）作为n型覆盖层2，CuGa（SySe1-y）2（0.48 <= y <= 0.88）或CuGaxAl1-x（SySe1-y）2（0 <= x <= 0 <= y <= 1 ）作为有源层3，CuAl（SySe1-y）2（0.5 <= y <= 0.9）或CuGaxAl1-x（SySe1-y）2（0 <= x <= 0 <= y <= 1）在基板上依次形成P型包层4，作为盖层5的P型GaP，绝缘层6和P型电极7，在背面形成n型电极8因此，在半导体激光器结构中使用易于形成P型的I-III-IV2化合物半导体，以通过增加波长来增加对光敏材料的灵敏度，从而提高扫描速度。和决议。
申请日期	1986-12-01
专利号	JP1988140588A
专利状态	失效
申请号	JP1986287208
公开（公告）号	JP1988140588A
IPC 分类号	H01L33/06 \| H01L33/14 \| H01L33/28 \| H01L33/30 \| H01L33/34 \| H01S5/00 \| H01S5/026 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/79124
专题	半导体激光器专利数据库
作者单位	RICOH CO LTD
推荐引用方式 GB/T 7714	IEJI HIROYUKI. Semiconductor light emitting device. JP1988140588A[P]. 1988-06-13.

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