Semiconductor laser

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	Semiconductor laser
其他题名	Semiconductor laser
	UEKI ATSUSHI; SHIKADA MINORU
	1984-06-27
专利权人	NIPPON DENKI KK
公开日期	1984-06-27
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain the titled semiconductor laser with sufficiently minor fluctuation of water lengths at the time of modulation of the semiconductor laser according to an applied current by a method wherein the resonator of the laser is composed of a refractive index correcting element provided with the end surface thereof on the one side opposing to the incident beam- outgoing end surface on the one side of a semiconductor laser element, the end surface on the other side of this semiconductor laser and the end surface on the other side of the refractive index correcting element. CONSTITUTION:A photo semiconductor pellet 1 and a refrative index correcting element 10 are arranged facing each other with a second end surface 8 and a third end surface 14 which are neiboring each other, an active layer 4 and a guidewave path layer 34 positioned to each other so as to be coupled optically are fixed on a fixed stand 18, and a laser resonator 19 is composed of a first end surface 7 and a fourth end surface 16. To the photosemiconductor pellet 1 is applied a first signal current 38 at the base band zone from a first driver 20 for modulating the strength of laser output 22. On the other hand, to the refractive index correcting element 10 is applied a second signal current 39 having a relation to complement each other with the first signal current 38 at the modulation degree through a second driver 24. According to such a method, the optical length between the laser resonators is kept at a constant value, because the variation of the refractive index of the active layer 4 can be negated with the refractive index variation of the waveguide path layer 34.
其他摘要	目的：通过一种方法获得在半导体激光器调制时根据施加的电流具有足够小的水长波动的标题半导体激光器，其中激光器的谐振器由设置有端部的折射率校正元件组成。其一侧的表面与半导体激光元件一侧的入射光束射出端面相对，该半导体激光器另一侧的端面和折射率校正元件另一侧的端面。组成：光电半导体芯片1和折射率校正元件10彼此面对布置，具有相互重叠的第二端面8和第三端面14，有源层4和导波路径彼此定位以便光学耦合的层34固定在固定支架18上，并且激光谐振器19由第一端面7和第四端面16组成。向光半导体芯片1施加第一信号第一驱动器20在基带区域的电流38用于调制激光输出22的强度。另一方面，向折射率校正元件10施加第二信号电流39，其具有彼此互补的关系。通过第二驱动器24以调制度信号电流38。根据这种方法，激光谐振器之间的光学长度保持在恒定值，因为有源层4的折射率的变化可以用波导路径层的折射率变化34。
申请日期	1982-12-17
专利号	JP1984111383A
专利状态	失效
申请号	JP1982221222
公开（公告）号	JP1984111383A
IPC 分类号	H01S5/00 \| H01S5/10 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/79109
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	UEKI ATSUSHI,SHIKADA MINORU. Semiconductor laser. JP1984111383A[P]. 1984-06-27.

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