Manufacture of semiconductor device

OPT OpenIR > 半导体激光器专利数据库

	Manufacture of semiconductor device
其他题名	Manufacture of semiconductor device
	TERASHIGE TAKASHI; ONAKA SEIJI
	1988-02-24
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1988-02-24
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a mirror of a good verticality by previously providing a TiO2 film on the vertical side wall surface of a Ti or Si3N4 film becoming a mask when etching a semiconductor wafer of a double-hetero structure using the mask thereby to make a semiconductor laser mirror of a desired shape. CONSTITUTION:On an N type InP substrate 6, an N-type InP layer 5, an InGaAsP layer 4, a P-type InP layer 3 and a P-type InGaAsP layer 10 are sequentially grown by the liquid-phase epitaxy, thereby making a double-hetero structured wafer 8. Then, when a selective etching is applied to the wafer 8, the entire surface of the layer 10 is first coated with a Ti film 2 on which a photoresist 1 of a predetermined shape is provided, and with this as a mask an etching is performed using CCl4. At this time, the side wall surface of the film 2 becomes substantially vertical because of the fast etch rate of the film 2, but there is a slight slope, so the side wall surface is made vertical by covering it with a TiO2 film 7 having a slow etch rate. Thereafter, with the films 2 and 7 as a mask an etching is performed using a CF4-system gas to remove to the middle of the layer 5, thereby obtaining a vertical mirror surface 9.
其他摘要	用途：在使用掩模蚀刻双异质结构的半导体晶片时，通过预先在Ti或Si3N4膜的垂直侧壁表面上提供TiO2膜成为掩模来获得具有良好垂直度的镜子，从而制造半导体所需形状的激光镜。组成：在N +型InP衬底6上，通过液相外延顺序生长N型InP层5，InGaAsP层4，P型InP层3和P型InGaAsP层10然后，当对晶片8施加选择性蚀刻时，首先在层10的整个表面上涂覆Ti膜2，在Ti膜2上提供预定形状的光致抗蚀剂1。并且以此为掩模，使用CCl4进行蚀刻。此时，由于薄膜2的快速蚀刻速率，薄膜2的侧壁表面变得基本垂直，但是存在轻微的倾斜，因此通过用具有TiO 2薄膜7覆盖侧壁表面来使侧壁表面垂直。缓慢的蚀刻速率。之后，以膜2和7作为掩模，使用CF 4系统气体进行蚀刻以去除到层5的中间，从而获得垂直镜面9。
申请日期	1986-08-08
专利号	JP1988043325A
专利状态	失效
申请号	JP1986187127
公开（公告）号	JP1988043325A
IPC 分类号	H01L21/302 \| H01L21/3065 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/78947
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	TERASHIGE TAKASHI,ONAKA SEIJI. Manufacture of semiconductor device. JP1988043325A[P]. 1988-02-24.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1988043325A.PDF（164KB）	专利		开放获取	CC BY-NC-SA	请求全文