Xi'an Institute of Optics and Precision Mechanics,CAS
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其他题名 | - |
FURUYAMA HIDETO; UEMATSU YUTAKA | |
1989-11-27 | |
专利权人 | KOGYO GIJUTSUIN |
公开日期 | 1989-11-27 |
授权国家 | 日本 |
专利类型 | 授权发明 |
摘要 | PURPOSE:To extremly reduce the absorption loss and the reflection loss of a DBR laser device by a method wherein the active layer located on the region, where a photo waveguide path exists, is formed thinner in thickness than that of the region where no photo waveguide path exists. CONSTITUTION:The photo waveguide path 2 is formed on a semiconductor substrate Subsequently, the first light confinement layer 3, an active layer 4 and the second light confinement layer 5 are grown by crystallization successively. At this time, on the region where a light waveguide path 2 exists, the growing thickness of the crystal growth layer is to be formed thinner due to the characteristics of crystal growth on the convexed part of the substrate. As a result, the active layer is thinly formed on the photo waveguide path, and thickly formed on the other flat surface part. BEsides, the crystal is grown in tapered form on the boundary part of the photo waveguide path of the active layer and on the semiconductor substrate. Then, a current injection part is provided on the flat part where the photo waveguide path and the optical axis will be coincided with each other, thereby enabling to obtain excellent light confinement at the active layer because of the absence of the photo waveguide path on the active region. |
其他摘要 | 用途:通过一种方法极大地减少DBR激光器件的吸收损耗和反射损耗,其中位于存在光波导路径的区域上的有源层形成的厚度薄于没有光波导的区域的厚度。路径存在。组成:光波导路径2形成在半导体基板1上。随后,第一光限制层3,有源层4和第二光限制层5依次通过结晶生长。此时,在存在光波导路径2的区域上,由于在基板的凸起部分上的晶体生长特性,晶体生长层的生长厚度将形成得更薄。结果,有源层薄薄地形成在光波导路径上,并且厚厚地形成在另一个平坦表面部分上。在BE侧,晶体以锥形形式生长在有源层的光波导路径的边界部分上和半导体衬底上。然后,在光波导路径和光轴将彼此重合的平坦部分上提供电流注入部分,从而由于在光源上没有光波导路径,因此能够在有源层获得优异的光限制。活跃地区。 |
申请日期 | 1982-04-08 |
专利号 | JP1989055589B2 |
专利状态 | 失效 |
申请号 | JP1982057269 |
公开(公告)号 | JP1989055589B2 |
IPC 分类号 | H01S5/00 | H01S5/12 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/78672 |
专题 | 半导体激光器专利数据库 |
作者单位 | KOGYO GIJUTSUIN |
推荐引用方式 GB/T 7714 | FURUYAMA HIDETO,UEMATSU YUTAKA. -. JP1989055589B2[P]. 1989-11-27. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1989055589B2.PDF(260KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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