Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser | |
其他题名 | Semiconductor laser |
YAMAMOTO SABURO; MORIMOTO TAIJI; MIYAUCHI NOBUYUKI; SAKII SHIGEKI; HAYASHI HIROSHI | |
1986-04-08 | |
专利权人 | SHARP CORP |
公开日期 | 1986-04-08 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To obtain the laser capable of making a stable basic lateral mode oscillation while keeping a state of high light output by a method wherein two grooves along the stripe-form channel groove which will become a current path of a semiconductor laser element are formed in the central part of said groove and only this part is used for a current paths and all of other parts are covered with a current preventing layer. CONSTITUTION:In the stripe groove 28 part which will become a current path of a surface of a P type GaAs substrate 14 having a (100) plane, two V-shaped stripe grooves 29 along direction are formed in the predetermined intervals by etching. Nextly an N type GaAs current preventing layer 15 is grown thinly in the stripe groove 28 part and thickly in the region surrounding said part. The stripe groove 29 part is left to be exposed. After that, a P type GaAlAs clad layer 16, a P type GaAlAs active layer 17, an N type GaAlAs clad layer 18, and an N type GaAs cap layer 19 are laminated and grown over the whole surface with filling the groove 29. The layer 19 is coated with an N-side electrode 20 of Au-Ge-N and a back surface of the substrate 14 is coated with a P-side electrode 21 of Au-Cr. |
其他摘要 | 目的:通过一种方法获得能够在保持高光输出状态的同时产生稳定的基本横向模式振荡的激光器,其中形成沿着将成为半导体激光器元件的电流路径的条形沟槽的两个沟槽。所述凹槽的中心部分和仅该部分用于电流路径,并且所有其他部分都覆盖有电流防止层。组成:在条形槽28部分,它将成为具有(100)平面的P型GaAs基板14的表面的电流路径,形成沿方向的两个V形条纹槽29通过蚀刻以预定间隔。接下来,N型GaAs电流防止层15在条纹槽28部分中薄薄地生长,并且在围绕所述部分的区域中厚厚地生长。条纹槽29部分暴露在外。之后,在填充沟槽29的整个表面上层叠并生长P型GaAlAs包层16,P型GaAlAs有源层17,N型GaAlAs包层18和N型GaAs盖层19。层19涂覆有Au-Ge-N的N侧电极20,并且基板14的背面涂覆有Au-Cr的P侧电极21。 |
申请日期 | 1984-09-11 |
专利号 | JP1986067982A |
专利状态 | 失效 |
申请号 | JP1984190894 |
公开(公告)号 | JP1986067982A |
IPC 分类号 | H01S5/00 | H01S5/042 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/78559 |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP CORP |
推荐引用方式 GB/T 7714 | YAMAMOTO SABURO,MORIMOTO TAIJI,MIYAUCHI NOBUYUKI,et al. Semiconductor laser. JP1986067982A[P]. 1986-04-08. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1986067982A.PDF(267KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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