Xi'an Institute of Optics and Precision Mechanics,CAS
Manufacture of semiconductor laser | |
其他题名 | Manufacture of semiconductor laser |
JINDOU MASAAKI; KAWANO HIDEO; AMANO TOSHIMASA | |
1984-07-11 | |
专利权人 | NIPPON DENKI KK |
公开日期 | 1984-07-11 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To enable to form flatly an epitaxial layer in a later process by a method wherein the side surface and the upper surface are cleaned with a solution containing an element whose standard oxidation-reduction potential is negative and absolute value is 1 or more, after mesa etching. CONSTITUTION:An N type clad layer 2, an N type guide layer 3, an active layer 4, and a P type clad layer 5 are formed on an N type GaAs substrate Next, a mesa is formed by selective etching from the layer 5 to the depth reaching the substrate Then, before the second liquid growing process, the oxide layer of the mesa is removed by cleaning the side surface and the upper surface of the mesa with the solution containing the element such as Al, Mg, and Be whose standard oxidation-reduction potential is negative and absolute value is 1 or more. Thereafter, a P type layer 6, an N type layer 7, a P type layer 8, and a P type layer 9 are successively formed by the second liquid epitaxial growth. This process enables to form current block layers 6 and 7 with good controllability of shape, further thereafter form the epitaxial layer flatly over the entire surface of the crystal. Thereby, the efficiency of thermal dissipation can be improved by tightly contacting an electrode on a heat sink. |
其他摘要 | 用途:通过一种方法,能够在后续工艺中平坦地形成外延层,其中侧面和上表面用含有标准氧化还原电位为负且绝对值为1或更大的元素的溶液清洗,之后台面蚀刻。组成:N型覆盖层2,N型引导层3,有源层4和P型覆层5形成在N型GaAs衬底1上。接下来,通过从该层选择性蚀刻形成台面然后,在第二液体生长过程之前,通过用含有诸如Al,Mg的元素的溶液清洁台面的侧表面和上表面来去除台面的氧化物层,然后,在第二液体生长过程之前,去除台面的氧化物层。和标准氧化还原电位为负且绝对值为1或更大的Be。之后,通过第二液体外延生长连续形成P型层6,N型层7,P型层8和P型层9。该工艺能够形成具有良好形状可控性的电流阻挡层6和7,然后在晶体的整个表面上平坦地形成外延层。因此,通过紧密接触散热器上的电极可以提高散热效率。 |
申请日期 | 1982-12-24 |
专利号 | JP1984119781A |
专利状态 | 失效 |
申请号 | JP1982233066 |
公开(公告)号 | JP1984119781A |
IPC 分类号 | H01L21/208 | H01S5/00 | H01S5/227 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/78553 |
专题 | 半导体激光器专利数据库 |
作者单位 | NIPPON DENKI KK |
推荐引用方式 GB/T 7714 | JINDOU MASAAKI,KAWANO HIDEO,AMANO TOSHIMASA. Manufacture of semiconductor laser. JP1984119781A[P]. 1984-07-11. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1984119781A.PDF(307KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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