Semiconductor laser device and manufacture thereof

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	Semiconductor laser device and manufacture thereof
其他题名	Semiconductor laser device and manufacture thereof
	MIHASHI YUTAKA; KAKIMOTO SHIYOUICHI; MURAKAMI TAKASHI; TAKAMIYA SABUROU
	1984-12-11
专利权人	MITSUBISHI DENKI KK
公开日期	1984-12-11
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a semiconductor laser device, oscillation threshold currents thereof are small and which has long life and equal characteristics, by forming a current block layer to a horizontal surface section except the stepped section of a substrate and giving current constriction function. CONSTITUTION:When a P type AlxGa1-xclad layer 4, a P type AlyGa1-yAs active layer 3, an N type AlxGa1-xAs layer 2 and an N type GaAs layer 5 are formed on an N type GaAs current block layer 12 and a P type GaAs substrate 11 with an opening section 13 for the layer 12 and positive voltage is applied to a P side electrode 8 and negative one to an N side electrode 7, P-N-P-N structure is formed where the N type block layer 12 interposes and functions as a current block layer, and currents flow only through the opening section 13. Holes are injected to an active region 10 from the P type clad layer 4 and electrons to it from the N type clad layer 2 and a recombined light emission is generated, an induced emission is started, and a laser oscillation is generated. Reactive currents passing through sections except the active region 10 can be reduced largely.
其他摘要	目的：为了获得半导体激光器件，通过在除了基板的台阶部分之外的水平表面部分形成电流阻挡层并提供电流收缩功能，其振荡阈值电流小并且具有长寿命和相同的特性。组成：当P型AlxGa1-xclad层4，P型AlyGa1-yAs有源层3，N型AlxGa1-xAs层2和N型GaAs层5形成在N型GaAs电流阻挡层12和具有用于层12的开口部分13和正电压的P型GaAs衬底11被施加到P侧电极8并且负极一个被施加到N侧电极7，形成PNPN结构，其中N型阻挡层12插入并用作电流阻挡层，电流仅通过开口部分13流动。空穴从P型包层4注入有源区10，并从N型包层2向其发射电子，产生重新组合的发光，开始诱导发射，并产生激光振荡。通过除有源区10之外的部分的无功电流可以大大减小。
申请日期	1983-05-30
专利号	JP1984219976A
专利状态	失效
申请号	JP1983097134
公开（公告）号	JP1984219976A
IPC 分类号	H01S5/00 \| H01S5/223 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/78462
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KK
推荐引用方式 GB/T 7714	MIHASHI YUTAKA,KAKIMOTO SHIYOUICHI,MURAKAMI TAKASHI,et al. Semiconductor laser device and manufacture thereof. JP1984219976A[P]. 1984-12-11.

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