Light emitting element and manufacture thereof

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	Light emitting element and manufacture thereof
其他题名	Light emitting element and manufacture thereof
	KAWASAKI HIDEJI
	1991-11-01
专利权人	CANON INC
公开日期	1991-11-01
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable an electrode to be enlarged in area by a method wherein a double hetero-interface is formed protrudent in a direction parallel to the surface of a substrate, a light emitting element is made to emit light rays enough in a lateral direction to be high in gain, and the electrode is provided onto a crystal growth surface. CONSTITUTION:An amorphous substrate 1 is made to serve as a non-nucleation surface, a very fine nucleation surface 5 is formed, and a single crystal 2 of III-V compound semiconductor is selectively formed through an MOCVD method or the like and further grown to occupy a enough area. The surface is polished to be a mirror surface, and a double hetero-structure composed of a clad layer 3, an active layer 6, a clad layer 7, and a cap layer 8 is made to grow. An electrode 9 is provided to the surface, and a resist mask is laid on an active region, which is etched up to the halfway point of the clad layer 3. An electrode 4 is provided to a crystal growth surface, the electrode 4 on the active region is lifted off through a resist releasing liquid, and thus a light emitting element is obtained.
其他摘要	目的：为了使电极在面积上扩大，其中在平行于基板表面的方向上突出形成双异质界面，使发光元件在横向上发射足够的光线。增益高，电极提供在晶体生长表面上。组成：使非晶衬底1用作非成核表面，形成非常精细的成核表面5，并通过MOCVD方法等选择性地形成III-V族化合物半导体的单晶2并进一步生长占据足够的面积。将表面抛光成镜面，并使由包层3，有源层6，包层7和盖层8构成的双异质结构生长。在表面上设置电极9，在有源区域上放置抗蚀剂掩模，将有机区域蚀刻到包层3的中点。在晶体生长面上设置电极4，在电极4上设置电极4。通过抗蚀剂释放液体提起活性区域，从而获得发光元件。
申请日期	1989-12-20
专利号	JP1991245584A
专利状态	失效
申请号	JP1989328321
公开（公告）号	JP1991245584A
IPC 分类号	H01L33/18 \| H01L33/20 \| H01L33/30 \| H01L33/40 \| H01S5/00 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/78437
专题	半导体激光器专利数据库
作者单位	CANON INC
推荐引用方式 GB/T 7714	KAWASAKI HIDEJI. Light emitting element and manufacture thereof. JP1991245584A[P]. 1991-11-01.

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