Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser device | |
其他题名 | Semiconductor laser device |
MARUNO SHIGEMITSU; SUGIMOTO HIROSHI; NOMURA YOSHITOKU; OGATA HITOSHI | |
1989-11-20 | |
专利权人 | 光技術研究開発株式会社 |
公开日期 | 1989-11-20 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To modulate under a low current injecting condition at a high speed by shifting the bottom of the conduction band of a collector layer to an energy position equal to or smaller than n=1 quantum level, and discharging electrons by tunneling from a base layer to the collector layer. CONSTITUTION:An optical waveguide is formed of an emitter layer 2 having a conduction band disposed at its bottom at an energy position for supplying electrons by tunneling to a quantum level of n=2 or more of electrons, and a collector layer 6 having a band gap larger than that of a quantum well and a conduction band disposed at its bottom at an energy position larger than n=1 of quantum level of the electrons as clad layers. A bias voltage is applied between the layers 5 and 6 to shift the bottom of the conduction band of the layer 6 to an energy position having equal to or smaller than n=1 quantum level, thereby discharging the electrons by tunneling from the layer 5 to the layer 6. Thus, a high modulation speed is obtained under low current injecting condition. |
其他摘要 | 目的:通过将集电极层导带的底部移动到等于或小于n = 1量子能级的能量位置,在高速低电流注入条件下调制,并通过隧道从基层释放电子到收集器层。组成:光波导由发射极层2和带有带的集电极层6形成,发射极层2的导电带位于其底部的能量位置,用于通过隧穿提供电子到n = 2或更多的电子的量子能级。间隙大于量子阱和设置在其底部的导带,其能量位置大于作为包层的电子的量子能级的n = 1。在层5和6之间施加偏压以将层6的导带的底部移动到具有等于或小于n = 1量子能级的能量位置,从而通过从层5到隧道的电子放电来放电。因此,在低电流注入条件下获得高调制速度。 |
申请日期 | 1988-05-16 |
专利号 | JP1989287982A |
专利状态 | 失效 |
申请号 | JP1988116918 |
公开(公告)号 | JP1989287982A |
IPC 分类号 | H01S3/10 | H01S3/06 | H01S5/00 | H01S5/06 | H01S5/34 | H01S5/50 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/78378 |
专题 | 半导体激光器专利数据库 |
作者单位 | 光技術研究開発株式会社 |
推荐引用方式 GB/T 7714 | MARUNO SHIGEMITSU,SUGIMOTO HIROSHI,NOMURA YOSHITOKU,et al. Semiconductor laser device. JP1989287982A[P]. 1989-11-20. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1989287982A.PDF(194KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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