Xi'an Institute of Optics and Precision Mechanics,CAS
| Semiconductor laser | |
| 其他题名 | Semiconductor laser |
| KAJIMURA TAKASHI; KANEHISA OSAMU; SAITO KATSUTOSHI | |
| 1989-06-30 | |
| 专利权人 | HITACHI LTD |
| 公开日期 | 1989-06-30 |
| 授权国家 | 日本 |
| 专利类型 | 发明申请 |
| 摘要 | PURPOSE:To improve heat radiation efficiency at a semiconductor laser edge side and to prevent heat generation due to optical absorption at the edge side by forming ZnxSe1-x(0 direction. Then Zn is diffused in the diffusion holes and a current path which reaches the layer 4 through the layer 5 is formed on a trapezoid groove. Then p side and n side electrodes 6, 7 are formed and a laser chip having a desired length of a resonator is constituted. The chip is put in low pressure MOCVD equipment then a ZnSSE film 8 of a desired thickness which is relevant to half of the laser oscillation wavelength is formed on both the end sides of the resonator of the chip at a predetermined temperature, thus increasing the heat radiation effect of the edge side. |
| 其他摘要 | 目的：通过在半导体激光器边缘侧形成高电阻率的ZnxSe1-x（0 |
| 申请日期 | 1987-12-23 |
| 专利号 | JP1989166588A |
| 专利状态 | 失效 |
| 申请号 | JP1987323988 |
| 公开（公告）号 | JP1989166588A |
| IPC 分类号 | H01S5/00 | H01S3/18 |
| 专利代理人 | - |
| 代理机构 | - |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/78287 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KAJIMURA TAKASHI,KANEHISA OSAMU,SAITO KATSUTOSHI. Semiconductor laser. JP1989166588A[P]. 1989-06-30. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| JP1989166588A.PDF（104KB） | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 | ||
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