Manufacture of semiconductor laser element

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	Manufacture of semiconductor laser element
其他题名	Manufacture of semiconductor laser element
	KONDO MASAFUMI; SUYAMA NAOHIRO; TAKAHASHI KOUSEI; HOSODA MASAHIRO; SASAKI KAZUAKI; HAYAKAWA TOSHIRO
	1990-01-19
专利权人	シャープ株式会社
公开日期	1990-01-19
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To form a semiconductor laser element possessed of an excellent oscillating property by a method wherein a semiconductor layer, which uses a group IV amphoteric element as a dopant, is grown on semiconductor growth faces of a substrate possessed of different Miller indexes respectively through a molecular beam epitaxy method. CONSTITUTION:A Cr doped semi-insulating GaAs substrate 31 of a normal mesa provided with a single slope is formed, where a semiconductor growth face 31a of a sloping 111A face (A denotes a group III element face) and a semiconductor growth face 31b of a 100 face are formed thereon. The following are successively grown on the semiconductor growth faces 31a and 31b through an MBE method: a non-doped high resistance GaAs buffer layer 32; a non-doped high resistance Al0.4Ga0.6As current block layer 33; a Si doped Al0.32Ga0.68As clad layer 34; a Si doped GaAs active layer 35; a Si doped Al0.32Ga0.68As clad layer 36; and a Si doped GaAs contact layer 37. Next, each p-n junction of the Si doped GaAs contact layer 37 and the Si doped GaAs contact layer 37 on the uppermost layer side above the semiconductor growth layer 31b are etched. Thereafter, a current block layer 38 is formed on the etched section. And, an n-type electrode 39 of AuGe/Ni and a p-type electrode 40 of Au/AuZn are evaporated. Then, the substrate 31 is abraded and then divided into chips.
其他摘要	目的：通过一种方法形成具有优异振荡特性的半导体激光器元件，其中使用IV族两性元素作为掺杂剂的半导体层分别通过一个生长在具有不同米勒指数的衬底的半导体生长面上的方法生长。分子束外延法。组成：形成具有单一斜率的正常台面的Cr掺杂半绝缘GaAs衬底31，其中倾斜111A的半导体生长面31a面对（A表示III族元素面）和半导体生长面31b在其上形成100面。通过MBE方法在半导体生长面31a和31b上连续生长以下：非掺杂的高电阻GaAs缓冲层32;非掺杂高电阻Al0.4Ga0.6As电流阻挡层33; Si掺杂Al0.32Ga0.68As包层34; Si掺杂的GaAs有源层35; Si掺杂的Al0.32Ga0.68As包覆层36;接下来，蚀刻Si掺杂的GaAs接触层37和半导体生长层31b上方的最上层侧的Si掺杂的GaAs接触层37的每个p-n结。此后，在蚀刻部分上形成电流阻挡层38。并且，蒸发AuGe / Ni的n型电极39和Au / AuZn的p型电极40。然后，研磨基板31，然后将其分成芯片。
申请日期	1988-07-01
专利号	JP1990015689A
专利状态	失效
申请号	JP1988165461
公开（公告）号	JP1990015689A
IPC 分类号	H01L21/203 \| H01S5/00 \| H01S5/223 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/78284
专题	半导体激光器专利数据库
作者单位	シャープ株式会社
推荐引用方式 GB/T 7714	KONDO MASAFUMI,SUYAMA NAOHIRO,TAKAHASHI KOUSEI,et al. Manufacture of semiconductor laser element. JP1990015689A[P]. 1990-01-19.

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