Compound semiconductor device

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	Compound semiconductor device
其他题名	Compound semiconductor device
	SERIZAWA AKIMOTO; HORI YOSHIKAZU
	1987-01-24
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1987-01-24
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To simplify the manufacturing process for a compound semiconductor device by forming a semiconductor laser and a light-receiving transistor integral with each other and fabricating the transistor at the same time as the laser producing process, so that light-emitting and -receiving elements are monolithically formed in one unit and an electric signal received by the light-receiving element is amplified. CONSTITUTION:An active region 2 is provided on a substrate 1 having a first conductivity type, the active region 2 having a second conductivity type and a smaller band gap than that of the substrate A first clad region 3 is provided on the active region 2, the clad region 3 having the first conductivity type and a band gap larger than that of the active region 2. A second region 5 having the second conductivity type is provided in contact with the active region 2. Thus, a laser section employing the active region 2 as its light-emitting part and a transistor serving as a light-receiving section which employs as its base region a part of the active region 2 other than the laser section are formed on the same substrate. For example, with the illustrated structure, resonators are formed at both ends, respectively, of the active layer 2, thereby enabling laser oscillation. A hetero junction phototransistor is formed from a clad layer 3', an active layer 2' and the substrate 1 and operated as a light-receiving element for monitoring laser light.
其他摘要	用途：通过形成彼此一体的半导体激光器和光接收晶体管，并在激光产生过程的同时制造晶体管，简化化合物半导体器件的制造工艺，使发光和接收元件在一个单元中单片地形成，并且由光接收元件接收的电信号被放大。组成：有源区2设置在具有第一导电类型的基板1上，有源区2具有第二导电类型和比基板1更小的带隙。第一包层区3设置在有源区上如图2所示，包层区3具有第一导电类型和带隙大于有源区2的带隙。具有第二导电类型的第二区域5设置成与有源区2接触。因此，采用该激光器部分的激光器部分。作为其发光部分的有源区2和用作光接收部分的晶体管形成在同一衬底上，该光接收部分采用除激光部分之外的有源区2的一部分作为其基区。例如，利用所示的结构，谐振器分别形成在有源层2的两端，从而能够激光振荡。异质结光电晶体管由包层3'，有源层2'和基板1形成，并作为用于监视激光的光接收元件操作。
申请日期	1985-07-12
专利号	JP1987015874A
专利状态	失效
申请号	JP1985154581
公开（公告）号	JP1987015874A
IPC 分类号	H01L33/30 \| H01S5/00 \| H01S5/026 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/78077
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	SERIZAWA AKIMOTO,HORI YOSHIKAZU. Compound semiconductor device. JP1987015874A[P]. 1987-01-24.

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