Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	KUMABE HISAO; SOGOU TOSHIO; TAKAMIYA SABUROU
	1982-12-24
专利权人	MITSUBISHI DENKI KK
公开日期	1982-12-24
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a single mode oscillation having low oscillation threshold current and high stability forming an N type or P type or non-conductive region of a depth reaching an active region in contact with an end face of a resonator. CONSTITUTION:It is assumed that the right sides of P type regions 8 and 9 are N type regions. A P type or I type region 12 is formed in a depth deeper than that reaching an active layer 3 in contact with the end face 10 of a resonator in the N type region, but is not contacted with the region 9, is formed as near as possible in a length to be superposed with the crank-shaped bent part 11 in an end face direction vertical to the direction of the resonator. When a voltage is applied to both P type and N type electrodes in this manner, a most current flow only to the P-N juntion parallel to the direction of the resonator, and does not accordingly flow through the P-N junction parallel to the end face bent at the crank. Accordingly, a reactive current can be eliminated, with the result that the laser of low threshold current can be obtained.
其他摘要	目的：获得具有低振荡阈值电流和高稳定性的单模振荡，形成深度达到与谐振器端面接触的有源区的N型或P型或非导电区。组成：假设P型区域8和9的右侧是N型区域。 AP型或I型区域12形成的深度深于到达与N型区域中的谐振器的端面10接触的有源层3的深度，但是不与区域9接触，形成为接近可以在与曲柄形弯曲部分11重叠的长度上沿垂直于谐振器方向的端面方向重叠。当以这种方式向P型和N型电极施加电压时，最大电流仅流向平行于谐振器方向的PN，并且因此不会平行于弯曲的端面流过PN结。曲柄。因此，可以消除无功电流，结果可以获得低阈值电流的激光器。
申请日期	1981-06-19
专利号	JP1982210687A
专利状态	失效
申请号	JP1981095812
公开（公告）号	JP1982210687A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S5/16 \| H01S5/22 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/77785
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KK
推荐引用方式 GB/T 7714	KUMABE HISAO,SOGOU TOSHIO,TAKAMIYA SABUROU. Semiconductor laser device. JP1982210687A[P]. 1982-12-24.

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