Manufacture of semiconductor laser

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	Manufacture of semiconductor laser
其他题名	Manufacture of semiconductor laser
	OKAZAKI JIRO
	1992-02-19
专利权人	FUJITSU LTD
公开日期	1992-02-19
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To form a metal barrier film uniformly on the whole surface by a method wherein eaves in an inverted mesa shape are eliminate at edges which partition a recessed part. CONSTITUTION:An n-type InP clad layer 2, an InGaAsP active layer 3 and a p-type InP clad layer 4 are grown on an n-type InP substrate An SiO2 film 5 and a photoresist film 6 are formed on them. Then, the SiO2 film 5 is patterned by making use of the photoresist film 6 as a mask; eaves in a forward mesa shape are produced. Then, the clad layer 4, the active layer 3 and the clad layer 2 are etched by making use of the photoresist film 6 and the SiO2 film 5 as a mask; and a mesa is formed. Then, the SiO2 film 5 is etched: and the eaves are removed. Then, the photoresist film 6 is removed; and a high-resistance InP buried layer 7 which buries the SiO2 film 5 and the mesa is formed. Then, when the SiO2 film 5 is removed, a recessed part 7A is formed, and edges of the buried layer 7 which partitions the recessed part are formed to be a forward tape shape. Then, an insulating film 8 composed of SiO2 is formed; it is etched; an opening in a stripe shape is formed; and the top face of the mesa shape is exposed again.
其他摘要	用途：通过一种方法在整个表面上均匀地形成金属阻挡膜，其中倒置台面形状的屋檐在划分凹陷部分的边缘处被消除。组成：在n型InP衬底1上生长n型InP包层2，InGaAsP有源层3和p型InP包层4.在它们上形成SiO2薄膜5和光刻胶薄膜6。然后，利用光致抗蚀剂膜6作为掩模，对SiO2膜5进行图案化。产生前向台面形状的屋檐。然后，利用光致抗蚀剂膜6和SiO2膜5作为掩模，对包层4，有源层3和包层2进行蚀刻。并且形成了台面。然后，蚀刻SiO 2膜5：并去除屋檐。然后，去除光致抗蚀剂膜6;形成掩埋SiO2膜5和台面的高电阻InP埋层7。然后，当去除SiO2膜5时，形成凹陷部分7A，并且将分隔凹陷部分的掩埋层7的边缘形成为正带形状。然后，形成由SiO2构成的绝缘膜8;它被蚀刻了;形成条纹形状的开口;并且台面形状的顶面再次露出。
申请日期	1990-06-19
专利号	JP1992049687A
专利状态	失效
申请号	JP1990158801
公开（公告）号	JP1992049687A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/77654
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	OKAZAKI JIRO. Manufacture of semiconductor laser. JP1992049687A[P]. 1992-02-19.

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