Light emitting element

OPT OpenIR > 半导体激光器专利数据库

	Light emitting element
其他题名	Light emitting element
	KAYANE NAOKI; NAKAJIMA HISAO; OKAI MAKOTO; TSUJI SHINJI
	1988-12-06
专利权人	HITACHI LTD
公开日期	1988-12-06
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a light emitting element in which a light distribution can be confined by disordering even in a wavelength band of 1-6mum by containing In but not containing P in the component element of a compound semiconductor film. CONSTITUTION:A P-type InP clad layer 2 (1mum thick), an undoped InGaA As/ InGaAs superlattice layer 3 (lnGaA As: 100Angstrom thick, InA As: 100Angstrom thick, each with 5 layers), an N-type InP clad layer 5 (5mum thick), and an N-type InGaAs layer 6 (0.5mum thick) are sequentially laminated by an organic metal vapor growing method on a P-type InP substrate Thereafter, Zn is diffused in a region 7 by a selectively diffusing method. The Zn-diffused section 4 of the superlattice layer becomes by disordering lnGaAlAs layer of mean composition. Then, it is covered with an insulating film 8, and an AnGeNi-Au electrode 9 is deposited. Subsequently, a Cr-Au electrode 10 is deposited on the rear face of the substrate, and isolated into chips by cleaving and scribing. When a current flows to the element, carrier is injected to the InGaAs layer of the layer 3 to radiate light. The emitted light wavelength is 55mum.
其他摘要	目的：通过在化合物半导体膜的组成元素中含有In但不含P，即使在1-6μm的波段中也可以通过无序化来限制光分布的发光元件。组成：P型InP包层2（1mum厚），未掺杂的InGaA As / InGaAs超晶格层3（lnGaA As：100埃厚，InA As：100埃厚，每层有5层），N型InP包层通过有机金属气相生长法在P型InP衬底1上依次层叠5（5μm厚）和N型InGaAs层6（0.5μm厚）。之后，Zn在区域7中通过a扩散选择性扩散方法。超晶格层的Zn扩散部分4变成无序的平均组成的InGaAlAs层。然后，用绝缘膜8覆盖，沉积AnGeNi-Au电极9。随后，将Cr-Au电极10沉积在基板的背面上，并通过切割和划线将其分离成芯片。当电流流到元件时，载流子被注入层3的InGaAs层以辐射光。发射的光波长为55μm。
申请日期	1987-05-29
专利号	JP1988299186A
专利状态	失效
申请号	JP1987131125
公开（公告）号	JP1988299186A
IPC 分类号	H01L33/06 \| H01L33/14 \| H01L33/30 \| H01L33/40 \| H01L33/44 \| H01S5/00 \| H01S5/20 \| H01S5/223 \| H01S5/343 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/77584
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	KAYANE NAOKI,NAKAJIMA HISAO,OKAI MAKOTO,et al. Light emitting element. JP1988299186A[P]. 1988-12-06.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1988299186A.PDF（148KB）	专利		开放获取	CC BY-NC-SA	请求全文