Manufacture of semiconductor device

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	Manufacture of semiconductor device
其他题名	Manufacture of semiconductor device
	TANAHASHI TOSHIYUKI; NAKAJIMA KAZUO
	1984-07-11
专利权人	FUJITSU KK
公开日期	1984-07-11
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain an excellent Al1-xInxAs layer of not less than 0.1mum thickness by previously designing thickness on an InP group semiconductor substrate or a melting liquid for growth constituting an AlInAs layer to a specific value or more when the melting liquid is brought into contact with the upper section of the substrate and the AlInAs layer is grown. CONSTITUTION:An N type InP clad layer 12, an InGaAsP active layer 13, a P type AlInAs clad layer 14, a P type InP clad layer 15, a P type InGaAs contact layer 16 and an N type InP cap layer 17 are laminated on the N type InP substrate 11 and liquid-phase epitaxial grown, and a window is bored to the layer 17 and a P-side electrode 18 being in contact with the layer 16 is attached and an N-side electrode 19 on the back of the substrate 11 respectively, thus manufacturing the semiconductor laser device. In the constitution, the thickness of a melt for growth is brought to 1mm. or more and a growth starting temperature is selected to approximately 750 deg.C and cooling velocity to approximately 0.3 deg.C/min when the P type AlInAs clad layer 14 functioning as confining carriers is grown. Accordingly, thickness of 0.1mm. or more required for confining carriers is obtained positively.
其他摘要	目的：通过预先将InP族半导体衬底或构成AlInAs层的用于生长的熔化液体的厚度设定为特定值或更高，当熔融液体进入时，获得具有不小于0.1μm厚度的优良Al1-xInxAs层接触基板的上部并生长AlInAs层。构成：N +型InP包层12，InGaAsP有源层13，P型AlInAs包层14，P型InP包层15，P型InGaAs接触层16和N型InP盖层17层压在N +型InP衬底11上并进行液相外延生长，并且窗口被钻出到层17，并且与层16接触的P侧电极18被附接，并且N侧电极19分别放置在基板11的背面，由此制造半导体激光器件。在结构中，生长用熔体的厚度达到1mm。当生长用作限制载体的P型AlInAs覆盖层14时，生长起始温度选择为大约750℃并且冷却速度大约为0.3℃/分钟。因此，厚度为0.1毫米。或者更多用于限制载体的材料是正面获得的。
申请日期	1982-12-24
专利号	JP1984119719A
专利状态	失效
申请号	JP1982233129
公开（公告）号	JP1984119719A
IPC 分类号	H01L21/208 \| H01S5/00 \| H01S5/323 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/77531
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	TANAHASHI TOSHIYUKI,NAKAJIMA KAZUO. Manufacture of semiconductor device. JP1984119719A[P]. 1984-07-11.

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