Semiconductor device and manufacture thereof

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor device and manufacture thereof
其他题名	Semiconductor device and manufacture thereof
	KURODA MUNEO; FUKUZAWA TADASHI; KAJIMURA TAKASHI
	1983-02-08
专利权人	HITACHI SEISAKUSHO KK
公开日期	1983-02-08
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To grow layers free of mutual diffusion or cross doping by a method wherein a single crystalline semiconductor crystal with its lattice constant and thermal expansion factor equal to those of a compound semiconductor the crystals thereof are to be grown is used as a substrate whereon said compound semiconductor layer is formed by the molecular beam evaporation method. CONSTITUTION:The surface of an N type Ge dislocationless monocrystal substrate 1 of the face (100) is mirror finished and the distorted layer is removed by means of the CP4 etchant. After rinsing and drying, the substrate 1 is housed in a molecular beam evaporation-deposition unit. The vacuum in the unit is set at 1X10Torr and the substrate 1 is heated up to 650 deg.C and held there for about 5min for the removal of oxides and others adsorbed by its surface. After this, an N type Ga0.4Al0.6As clad layer 2, undoped Ga0.8Al0.2As active layer 3, P type Ga0.4Al0.6As clad layer 4, N type GaAs capping layer 5 are grown, to be followed by the formation in the layer 5 of a region 6 diffused with Zn invading the layer 4, for the completion of a semicondutor laser device. The lattice contant for the substrate 1 is determined at 5.65-5.67Angstrom , and the thermal expansion factor is selected at 3.7-4.5X10 deg.C.
其他摘要	目的：通过一种方法生长无相互扩散或交叉掺杂的层，其中晶格常数和热膨胀系数等于其生长晶体的化合物半导体的晶体常数和热膨胀系数的单晶半导体晶体被用作其上所述的基板。通过分子束蒸发方法形成化合物半导体层。组成：面（100）的N型Ge无位错单晶衬底1的表面镜面抛光，并通过CP4蚀刻剂去除扭曲层。在漂洗和干燥之后，将基板1容纳在分子束蒸发 - 沉积单元中。将单元中的真空设定在1×10-8乇，并将基板1加热至650℃并在那里保持约5分钟以除去氧化物和其它表面吸附的氧化物。此后，生长N型Ga0.4Al0.6As包层2，未掺杂的Ga0.8Al0.2As有源层3，P型Ga0.4Al0.6As包层4，N型GaAs覆盖层5，接着是在区域6的层5中形成扩散的Zn，侵入层4，以完成半导体激光器件。基板1的晶格确定为5.65-5.67埃，热膨胀系数选择为3.7-4.5×10-6℃。
申请日期	1981-07-29
专利号	JP1983021320A
专利状态	失效
申请号	JP1981117772
公开（公告）号	JP1983021320A
IPC 分类号	H01L21/203 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/77505
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	KURODA MUNEO,FUKUZAWA TADASHI,KAJIMURA TAKASHI. Semiconductor device and manufacture thereof. JP1983021320A[P]. 1983-02-08.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1983021320A.PDF（134KB）	专利		开放获取	CC BY-NC-SA	请求全文