Semiconductor laser

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	Semiconductor laser
其他题名	Semiconductor laser
	NAGAI YUTAKA; IKEDA KENJI
	1991-05-24
专利权人	MITSUBISHI ELECTRIC CORP
公开日期	1991-05-24
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To make a laser oscillation stabilized in a certain region and to protect a semiconductor laser against filamentation by a method wherein a partial high reflective film is provided in the regions concerned, which extend in the width direction of an active region, on the end face of a resonator where a low reflective film has been formed. CONSTITUTION:A P-type Al0.5Ga0.5As clad layer 2 is arranged on a P-type GaAs substrate An undoped Al0.1Ga0.9As active layer 3 is provided onto the P-type clad layer 2. An N-type Al0.5Ga0.5As clad layer 4 is deposited on the active layer 3. An N-type GaAs contact layer 5 is laid on the N-type clad layer 4. An SiO2 insulating film 6 is partially provided in the contact layer 5. An N electrode 7 is formed on the contact layer 5 and the insulating film 6, and a P electrode 8 is formed on the rear side of the substrate The end face of a resonator located at the front of a semiconductor laser is entirely covered with a low reflective film 10, and high reflecting films 9 are partially formed thereon. Therefore, laser oscillation starts centering on the regions where the partial high reflective films 9 are provided. By this setup, a semiconductor laser of this design is protected against filamentation, and an active layer is made uniform in light emission.
其他摘要	目的：使激光振荡稳定在某一区域，并通过一种方法保护半导体激光器不受细丝影响，其中在相关区域中提供部分高反射膜，其在有源区域的宽度方向上延伸，在末端已经形成低反射膜的谐振器的面。组成：P型Al0.5Ga0.5As包层2设置在P型GaAs衬底1上。未掺杂的Al0.1Ga0.9As有源层3设置在P型覆层2上.N型在有源层3上沉积Al0.5Ga0.5As包层4.在N型覆层4上铺设N型GaAs接触层5.在接触层5中部分地设置SiO2绝缘膜6。 N电极7形成在接触层5和绝缘膜6上，P电极8形成在基板1的后侧。位于半导体激光器前面的谐振器的端面完全被覆盖有低反射膜10和部分地形成高反射膜9。因此，激光振荡开始于设置部分高反射膜9的区域。通过这种设置，保护了这种设计的半导体激光器免于发丝，并且使有源层的发光均匀。
申请日期	1989-10-05
专利号	JP1991123092A
专利状态	失效
申请号	JP1989260739
公开（公告）号	JP1991123092A
IPC 分类号	H01S5/00 \| H01S5/028 \| H01S5/042 \| H01S5/20 \| H01S5/40 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/77452
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	NAGAI YUTAKA,IKEDA KENJI. Semiconductor laser. JP1991123092A[P]. 1991-05-24.

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