Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	FUKUDA HIROKAZU; SHINOHARA KOUJI; KAWABATA YOSHIO; NISHIJIMA YOSHITO; YAMAMOTO KOUSAKU
	1983-09-01
专利权人	FUJITSU KK
公开日期	1983-09-01
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a semiconductor laser which has no variation in the thermal resistance at the junction between an element and a heat sink, heat dissipation and good reliability by composing electrodes arranged on an N type conductive region side of metal members having good adhesive strength to an insulating film. CONSTITUTION:An insulating film 3 made of SiO2 is covered on a compound semiconductor substrate 1 made of P type conductive PbSSe, the center is removed by etching in a stripe shape, with the film 3 as a mask an N type conductive region 2 is formed by a diffusing method. A gold (Au) deposited stripe electrode 21 which is electrically connected is formed onto the striped active region, a chromium (Cr) film 22 having excellent bonding strength with the film 3 is covered by a deposition method. The formed semiconductor laser element is fixed via indium (In) 7 on the heat sink base 6 made of Cu through the chromium film 22.
其他摘要	目的：通过在具有良好粘合强度的金属构件的N型导电区域侧上布置电极，获得元件和散热器之间的结点处的热阻没有变化，散热和良好可靠性的半导体激光器。绝缘膜。组成：在由P型导电PbSSe制成的化合物半导体衬底1上覆盖由SiO2制成的绝缘膜3，通过蚀刻条纹形状去除中心，以膜3作为掩模，形成N型导电区域2通过扩散方法。在条纹状有源区上形成电连接的金（Au）沉积条形电极21，通过沉积方法覆盖与膜3具有优异结合强度的铬（Cr）膜22。形成的半导体激光元件通过铟（In）7通过铬膜22固定在由Cu制成的散热器基座6上。
申请日期	1982-02-26
专利号	JP1983147188A
专利状态	失效
申请号	JP1982031156
公开（公告）号	JP1983147188A
IPC 分类号	H01L21/52 \| H01S5/00 \| H01S5/02 \| H01S5/022 \| H01S5/042 \| H01L21/58 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/77401
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	FUKUDA HIROKAZU,SHINOHARA KOUJI,KAWABATA YOSHIO,et al. Semiconductor laser device. JP1983147188A[P]. 1983-09-01.

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