Semiconductor light emitting element

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor light emitting element
其他题名	Semiconductor light emitting element
	ONODERA NORIAKI
	1990-05-14
专利权人	RICOH CO LTD
公开日期	1990-05-14
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To oscillate a plurality of laser lights having largely different oscillation wavelengths of lights from the same substrate by employing a multiple quantum well layer as the active layer of a semiconductor light emitting element, and crystal-mixing the predetermined region of the layer by diffusing impurity atoms. CONSTITUTION:Zinc of impurity is diffused in a predetermined part of a region A, and the Zn-diffused region 131A arrives at the lower part of an active layer 103, i.e., a boundary between the layer 103 and an N-type clad layer 124. Since the region 131A is completely enclosed with the layer 103, a multiple quantum well layer formed of a well layer for forming the layer 103 and a barrier layer is crystal-mixed by the impurity Zn, and in the mixed region a forbidden band width wider than that of the layer 103a and narrower than that of the layer 103b. That is, the well layer of the layer 103 of the region A is mixedcrystallized with the region 131A, and the part is formed with AI0.18Ga0.82 As layer. Thus, the mixed region, i.e., the wavelength of the laser light generated from the region A can be largely shortened as compared with that of the laser light generated from a region B.
其他摘要	目的：通过采用多量子阱层作为半导体发光元件的有源层，从同一衬底振荡具有大不相同的振荡波长的光的多个激光，并通过漫射对该层的预定区域进行晶体混合杂质原子。组成：杂质锌扩散到区域A的预定部分，锌扩散区域131A到达有源层103的下部，即层103和N型包层124之间的边界由于区域131A完全被层103包围，由用于形成层103的阱层和阻挡层形成的多量子阱层通过杂质Zn晶体混合，并且在混合区域中禁止带宽。比层103a的宽度宽并且比层103b的宽度窄。也就是说，区域A的层103的阱层与区域131A混合结晶，并且该部分由Al0.18Ga0.82 As层形成。因此，与从区域B产生的激光相比，混合区域，即从区域A产生的激光的波长可以大大缩短。
申请日期	1989-07-07
专利号	JP1990125487A
专利状态	失效
申请号	JP1989174348
公开（公告）号	JP1990125487A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/77311
专题	半导体激光器专利数据库
作者单位	RICOH CO LTD
推荐引用方式 GB/T 7714	ONODERA NORIAKI. Semiconductor light emitting element. JP1990125487A[P]. 1990-05-14.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1990125487A.PDF（325KB）	专利		开放获取	CC BY-NC-SA	请求全文