Semiconductor laser

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	Semiconductor laser
其他题名	Semiconductor laser
	YANASE TOMOO; SUGAO SHIGEO
	1987-08-06
专利权人	NEC CORP
公开日期	1987-08-06
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To facilitate oscillation with a high efficiency by blocking a leakage current which does not flow through an active layer by high resistance current blocking layers. CONSTITUTION:An active region 11 is held between high resistance current blocking layers 15 which are buried in two V-grooves and is provided in a bank 20 of an inverse V-shape. The top end part of the inverse V-shape bank 20 is contacted with a V-shape current flow layer 16. Therefore, a current which is made to flow by a voltage applied between a P-type electrode 19 and an N-type electrode 18 flows from the current flow layer 16 into the active region 11 selectively and the oscillation with very little leakage current and a high efficiency is realized. As the P-type electrode 19 is covered with an SiO2 insulating layer 17 except a stripe part above the active layer, the voltage is applied to the P-N junction of the active region 11 part only so that a capacitance induced by the high junction can be less than 2pF and speed modulation can be achieved.
其他摘要	用途：通过阻止高电阻电流阻挡层不流过有源层的漏电流，促进高效振荡。组成：有源区11保持在高阻抗电流阻挡层15之间，高阻抗电流阻挡层15埋在两个V形槽中，并设置在倒V形的堤20中。倒V形堤20的顶端部分与V形电流层16接触。因此，通过施加在P型电极19和N型电极之间的电压而流动的电流图18所示的电流流动层16选择性地从电流流动层16流入有源区11，并且实现了具有非常小的漏电流和高效率的振荡。由于P型电极19被除了有源层上方的条形部分之外的SiO2绝缘层17覆盖，所以电压仅施加到有源区11的PN结部分，使得由高结引起的电容可以是小于2pF并且可以实现速度调制。
申请日期	1986-01-31
专利号	JP1987179194A
专利状态	失效
申请号	JP1986020665
公开（公告）号	JP1987179194A
IPC 分类号	H01S5/00 \| H01S5/227 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/77220
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	YANASE TOMOO,SUGAO SHIGEO. Semiconductor laser. JP1987179194A[P]. 1987-08-06.

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