Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	ADACHI AKIHIRO
	1990-06-15
专利权人	MITSUBISHI ELECTRIC CORP
公开日期	1990-06-15
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To hold a narrow emitting spectral beam width and to make an oscillation wavelength variable by independently injecting a current to an active region having an active layer formed with a diffraction grating and a phase control region, and further feeding back a light externally to the phase control region. CONSTITUTION:An active region 1 and a phase control region 2 are provided. The active region 1 has an active layer 5 formed with a diffraction grating 4 for diffracting a light, and the phase control region 2 has an optical guide layer 3 formed continuously to the active layer 4 for varying a refractive index by an injected current. A current is injected to the active region 1 and the phase control region 2 by electrodes 6, 7 provided independently from each other. An emitting light from the emitting end face 9b of the optical guide layer 3 of the phase control region 2 of the laser light formed by oscillation is reflected on a reflecting mirror 10, and again introduced to the phase control region 2 as a feedback light. Thus, a narrow emitting light spectral beam width is held to vary the oscillation wavelength.
其他摘要	目的：通过独立地向具有由衍射光栅和相位控制区域形成的有源层的有源区域注入电流来保持窄的发射光束宽度并使振荡波长可变，并进一步将光从外部反馈到相位控制区域。组成：提供有源区域1和相位控制区域2。有源区1具有形成有用于衍射光的衍射光栅4的有源层5，并且相位控制区2具有连续形成到有源层4的光导层3，用于通过注入电流改变折射率。通过彼此独立设置的电极6,7将电流注入有源区1和相位控制区2。来自振荡形成的激光的相位控制区域2的光导层3的发射端面9b的发射光在反射镜10上反射，并再次作为反馈光引入相位控制区域2。因此，保持窄的发射光谱波束宽度以改变振荡波长。
申请日期	1988-12-09
专利号	JP1990156691A
专利状态	失效
申请号	JP1988311568
公开（公告）号	JP1990156691A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S5/14 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/77009
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	ADACHI AKIHIRO. Semiconductor laser device. JP1990156691A[P]. 1990-06-15.

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