Semiconductor laser element

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	Semiconductor laser element
其他题名	Semiconductor laser element
	KANEIWA SHINJI; HAYASHI HIROSHI; MIYAUCHI NOBUYUKI; KASAI SHUSUKE; MORIMOTO TAIJI
	1990-08-29
专利权人	SHARP CORP
公开日期	1990-08-29
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a semiconductor laser element which can operate with a low current, has a structure capable of being manufactured with satisfactory reproducibility and high reliability by providing two stripelike grown control layers elongated in a resonator direction at a lateral interval in a multilayer structure and containing Al, and forming an active layer between both the control layers. CONSTITUTION:A P-type Gatheta.5Altheta.5.As layer is patterned in a stripe state of 15mum of width by normal etching, and a V-shaped groove 28 arriving at a substrate 11 having 3mum of width and 2mum of depth is formed at the center of the stripe by a photolithography method and etching with a sulfuric acid etchant. The groove 28 is formed to form two stripelike grown control layers 27, 27 having 6mum of width. In a semiconductor laser element, a current is effectively injected to an active layer 16 formed above the groove 28. Since a P-N junction for blocking a current is formed of a N-type current blocking layer 12 formed in advance and a P-type clad layer 15, no leakage current is generated. Thus, it can be driven with low current and low power.
其他摘要	目的：为了获得能够以低电流工作的半导体激光元件，通过在多层结构中以横向间隔提供在谐振器方向上伸长的两个条纹状生长控制层，具有能够以令人满意的再现性和高可靠性制造的结构。含有Al，并在两个控制层之间形成活性层。组成：P型Gatheta.5Altheta.5。通过常规蚀刻将层图案化为宽度为15mum的条带状态，并且到达具有3mum宽度和2mum深度的基板11的V形槽28是通过光刻法在条纹的中心形成并用硫酸蚀刻剂蚀刻。形成凹槽28以形成两个条纹状生长的控制层27,27，其具有6μm的宽度。在半导体激光器元件中，电流被有效地注入到形成在凹槽28上方的有源层16中。由于用于阻挡电流的PN结由预先形成的N型电流阻挡层12和P型包层形成。层15，不产生漏电流。因此，它可以用低电流和低功率驱动。
申请日期	1989-02-16
专利号	JP1990216884A
专利状态	失效
申请号	JP1989037900
公开（公告）号	JP1990216884A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/76978
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	KANEIWA SHINJI,HAYASHI HIROSHI,MIYAUCHI NOBUYUKI,et al. Semiconductor laser element. JP1990216884A[P]. 1990-08-29.

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