Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor light-emitting device | |
其他题名 | Semiconductor light-emitting device |
SATO SHIRO; ONODERA NORIAKI | |
1987-07-07 | |
专利权人 | RICOH CO LTD |
公开日期 | 1987-07-07 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To obtain a device, through which beams are projected in the direction vertical to the surface of a substrate, by forming a projection vertical to one surface of the substrate, demarcating an active layer in the projection and shaping a recess in the active layer from the surface on the reverse side of the substrate. CONSTITUTION:N-type GaAs6 is formed to N-type AlGaAs7 on an N-type GaAs substrate 8 in an epitaxial manner. The columnar projection 6 is shaped through etching, using an SiO2 film 5 as a mask. A P layer 10 and a P layer 19 are formed through the diffusion of Zn, and P-N junctions 11a, 11b are shaped. The substrate 8 is etched using the mixed liquid of NH4OH and H2O2 and an opening 17 aligning with the projection 6 is formed, and Au/Sn electrodes 9 are attached. An Au/Zn/Au electrode 4 is evaporated. The electrode film 4 on the SiO2 film 5 on the end surface of the projection functions as an internal reflecting mirror. A Cu endothermic body 1 is fused at the nose of the projection 6 by In When electricity is conducted, bringing a cooling body 1 to positive potential, layer beams generated near the P-N junction 11a are radiated vertically to the substrate from the opening 17, and heat generated is dissipated to a thermal conductive substance layer 3 and the endothermic body 1 from the side surface of the projection 6, thus effectively keeping an active region at a fixed temperature, then acquiring a stable optical output. |
其他摘要 | 目的:通过在垂直于基板表面的方向上投射光束,在垂直于基板表面的方向上投射光束,在投影中划分有源层并在有源层中成形凹槽,以获得一种器件从基板背面的表面开始。组成:N型GaAs6以外延方式在N型GaAs衬底8上形成N型AlGaAs7。使用SiO 2膜5作为掩模,通过蚀刻对柱状突起6进行成形。通过Zn的扩散形成P层10和P +层19,并且形成P-N结11a,11b。使用NH 4 OH和H 2 O 2的混合液体以及与之对准的开口17蚀刻基板8形成突起6,并附着Au / Sn电极9。蒸发Au / Zn / Au电极4。在突起的端面上的SiO2膜5上的电极膜4用作内部反射镜。 Cu吸热体1通过In1熔合在突起6的前端。当进行通电时,将冷却体1带到正电位,在PN结11a附近产生的层梁从开口17垂直地辐射到基板,并且产生的热量被散发到导热物质层3和吸热体1。从突起6的侧表面开始,从而有效地将有源区保持在固定温度,然后获得稳定的光学输出。 |
申请日期 | 1985-12-26 |
专利号 | JP1987152186A |
专利状态 | 失效 |
申请号 | JP1985292348 |
公开(公告)号 | JP1987152186A |
IPC 分类号 | H01L33/10 | H01L33/14 | H01L33/24 | H01L33/30 | H01L33/40 | H01L33/44 | H01L33/62 | H01S5/00 | H01L33/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/76965 |
专题 | 半导体激光器专利数据库 |
作者单位 | RICOH CO LTD |
推荐引用方式 GB/T 7714 | SATO SHIRO,ONODERA NORIAKI. Semiconductor light-emitting device. JP1987152186A[P]. 1987-07-07. |
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