Semiconductor light-emitting device

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	Semiconductor light-emitting device
其他题名	Semiconductor light-emitting device
	SATO SHIRO; ONODERA NORIAKI
	1987-07-07
专利权人	RICOH CO LTD
公开日期	1987-07-07
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a device, through which beams are projected in the direction vertical to the surface of a substrate, by forming a projection vertical to one surface of the substrate, demarcating an active layer in the projection and shaping a recess in the active layer from the surface on the reverse side of the substrate. CONSTITUTION:N-type GaAs6 is formed to N-type AlGaAs7 on an N-type GaAs substrate 8 in an epitaxial manner. The columnar projection 6 is shaped through etching, using an SiO2 film 5 as a mask. A P layer 10 and a P layer 19 are formed through the diffusion of Zn, and P-N junctions 11a, 11b are shaped. The substrate 8 is etched using the mixed liquid of NH4OH and H2O2 and an opening 17 aligning with the projection 6 is formed, and Au/Sn electrodes 9 are attached. An Au/Zn/Au electrode 4 is evaporated. The electrode film 4 on the SiO2 film 5 on the end surface of the projection functions as an internal reflecting mirror. A Cu endothermic body 1 is fused at the nose of the projection 6 by In When electricity is conducted, bringing a cooling body 1 to positive potential, layer beams generated near the P-N junction 11a are radiated vertically to the substrate from the opening 17, and heat generated is dissipated to a thermal conductive substance layer 3 and the endothermic body 1 from the side surface of the projection 6, thus effectively keeping an active region at a fixed temperature, then acquiring a stable optical output.
其他摘要	目的：通过在垂直于基板表面的方向上投射光束，在垂直于基板表面的方向上投射光束，在投影中划分有源层并在有源层中成形凹槽，以获得一种器件从基板背面的表面开始。组成：N型GaAs6以外延方式在N型GaAs衬底8上形成N型AlGaAs7。使用SiO 2膜5作为掩模，通过蚀刻对柱状突起6进行成形。通过Zn的扩散形成P层10和P +层19，并且形成P-N结11a，11b。使用NH 4 OH和H 2 O 2的混合液体以及与之对准的开口17蚀刻基板8形成突起6，并附着Au / Sn电极9。蒸发Au / Zn / Au电极4。在突起的端面上的SiO2膜5上的电极膜4用作内部反射镜。 Cu吸热体1通过In1熔合在突起6的前端。当进行通电时，将冷却体1带到正电位，在PN结11a附近产生的层梁从开口17垂直地辐射到基板，并且产生的热量被散发到导热物质层3和吸热体1。从突起6的侧表面开始，从而有效地将有源区保持在固定温度，然后获得稳定的光学输出。
申请日期	1985-12-26
专利号	JP1987152186A
专利状态	失效
申请号	JP1985292348
公开（公告）号	JP1987152186A
IPC 分类号	H01L33/10 \| H01L33/14 \| H01L33/24 \| H01L33/30 \| H01L33/40 \| H01L33/44 \| H01L33/62 \| H01S5/00 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/76965
专题	半导体激光器专利数据库
作者单位	RICOH CO LTD
推荐引用方式 GB/T 7714	SATO SHIRO,ONODERA NORIAKI. Semiconductor light-emitting device. JP1987152186A[P]. 1987-07-07.

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