Xi'an Institute of Optics and Precision Mechanics,CAS
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其他题名 | - |
FUKUNAGA TOSHIAKI; KOBAYASHI KEISUKE; NAKAJIMA HISAO; SEMURA SHIGERU; UCHIDA YOKO; OOTA TSUNEAKI; KURODA TAKARO; NARISAWA TADASHI; YOKOZUKA TATSUO | |
1989-10-23 | |
专利权人 | KOGYO GIJUTSUIN |
公开日期 | 1989-10-23 |
授权国家 | 日本 |
专利类型 | 授权发明 |
摘要 | PURPOSE:To simplify the production process, make the contact of electrodes easy, and reduce the leak current, by forming a current constriction layer and a refraction index wave guide layer in the inside by Si implantation with high energy. CONSTITUTION:On the (001) face of the N-type GaAs substrate 1b, the following layers are laminated; the N-type GaAs buffer layer 2b, the N-type AlxGa1-xAs/ GaAsMQW buffer layer 3b, the N-type AlzGa1-zAs/AlwGa1-wAsMQW active layer 6, the P-type AlyGa1-yAs photo guide layer 7b, the P-type AlxGa1-xAs clad layer 8b and the cap layer 14. On the surface of this element, the metal mask is formed leaving the stripe in the (110) direction, and the Si ion with high energy is implanted to form the current constriction region 10. The P-type GaAs contact layer 9b is grown by epitaxy, when the MQW structure of the active layer 6 gives way to become the uniform mixed crystal, and the portion of low refraction index is formed in the oscillation region. Then, the P-side electrode layer 13 and the N-side electrode layer 12 are formed. |
其他摘要 | 目的:为了简化生产过程,通过高能量Si注入在内部形成电流收缩层和折射率波导层,使电极接触容易,并减少漏电流。组成:在N型GaAs衬底1b的(001)面上,层压下列层; N型GaAs缓冲层2b,N型Al x Ga 1-x As / GaAsMQW缓冲层3b,N型AlzGa1-zAs / AlwGa1-wAsMQW有源层6,P型AlyGa1-yAs光导层7b, P型Al x Ga 1-x As包覆层8b和覆盖层14.在该元件的表面上,形成金属掩模,在(110)方向上留下条纹,并且注入具有高能量的Si离子以形成电流当有源层6的MQW结构让位成为均匀的混晶时,P型GaAs接触层9b通过外延生长,并且在振荡区域中形成低折射率部分。然后,形成P侧电极层13和N侧电极层12。 |
申请日期 | 1985-04-12 |
专利号 | JP1989049030B2 |
专利状态 | 失效 |
申请号 | JP1985076677 |
公开(公告)号 | JP1989049030B2 |
IPC 分类号 | H01L21/265 | H01L21/205 | H01S5/00 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/76822 |
专题 | 半导体激光器专利数据库 |
作者单位 | KOGYO GIJUTSUIN |
推荐引用方式 GB/T 7714 | FUKUNAGA TOSHIAKI,KOBAYASHI KEISUKE,NAKAJIMA HISAO,et al. -. JP1989049030B2[P]. 1989-10-23. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1989049030B2.PDF(274KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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