Semiconductor laser

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor laser
其他题名	Semiconductor laser
	YOSHIMURA RIE; OSHIMA MASAAKI
	1989-06-22
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1989-06-22
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable an extremely improved single vertical mode laser to be easily obtained by mounting a waveguide path with a core and a clad consisting of two types of dielectrics on the inner reflection surface of inner-reflection interference type laser. CONSTITUTION:A p-InGaAsP8 is exposed in stripe shape by mounting a resist 9 on a p-InGaAsP8 of epitaxial wafer and by removing resist by approximately 6mum width in the direction which is at right angle to the channel direction of an active layer. Then, when the In-GaAsP layer and InP layer are removed, an n-InGaAsP5 is cut and a groove reaching an n-InP clad layer is formed. Then, an SiO2 10, a TiO2 11, and an SiO2 12 are deposited in the groove. An ohmic electrode is mounted to a p-InGaAsP8 and an n-InP substrate 1 of this wafer and cleavage is performed so that a waveguide path consisting of SiO2 and TiO2 is centered at the position of oscillator length L1+L2 200mum and L1-L2=70mum. When this laser is mounted to the stem and current is allowed to flow, an oscillation of approximately 25mA results, an optic output of 10mW or more results, or an extremely stable single vertical mode operation up to approximately four times larger than the threshold current Ith is achieved.
其他摘要	目的：通过在内反射干涉型激光器的内反射表面上安装具有芯和由两种类型的电介质组成的包层的波导路径，可以容易地获得极其改进的单垂直模式激光器。组成：通过在外延晶片的p-InGaAsP8上安装抗蚀剂9并在与有源层的沟道方向成直角的方向上去除约6μm宽的抗蚀剂，使p-InGaAsP8以条纹形状暴露。然后，当去除In-GaAsP层和InP层时，切割n-InGaAsP5并形成到达n-InP覆层的沟槽。然后，在凹槽中沉积SiO 2 10，TiO 2 11和SiO 2 12。将欧姆电极安装到该晶片的p-InGaAsP8和n-InP衬底1上，并进行解理，使得由SiO2和TiO2组成的波导路径以振荡器长度L1 + L2 200mum和L1-L2的中心为中心。 = 70mum。当该激光器安装在阀杆上并允许电流流动时，产生大约25mA的振荡，导致10mW或更多的光输出，或者非常稳定的单垂直模式操作，大约是阈值电流Ith的四倍。已完成。
申请日期	1987-12-17
专利号	JP1989160075A
专利状态	失效
申请号	JP1987319439
公开（公告）号	JP1989160075A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/76666
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	YOSHIMURA RIE,OSHIMA MASAAKI. Semiconductor laser. JP1989160075A[P]. 1989-06-22.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1989160075A.PDF（140KB）	专利		开放获取	CC BY-NC-SA	请求全文