Xi'an Institute of Optics and Precision Mechanics,CAS
| Light emission device | |
| 其他题名 | Light emission device |
| KAWASAKI HIDEJI | |
| 1990-08-10 | |
| 专利权人 | CANON INC |
| 公开日期 | 1990-08-10 |
| 授权国家 | 日本 |
| 专利类型 | 发明申请 |
| 摘要 | PURPOSE:To make up a reflecting mirror which is sufficient in strength and is free from electrical, optical absorption and maintain high light emission efficiency as well by making a single crystal grow on a dielectric substance and performing an epitaxial growth of a double hetero-structure. CONSTITUTION:Using a difference in a nucleation density between a nucleation face 7 and a non-nucleation face 8, III-V compound semiconductor crystals 9, such as GaAs, InP and like are formed through a selective nucleation process as shown in figure with epitaxial growths, such as MOCVD, LPE, MOMBE and the like. In the foregoing nucleation process, substrates 7 which are fine and have the nucleation density that is higher than that of the non-nucleation face are provided on the non-nucleation face 8 and its process makes each single crystal 9 grow to form a light emission element. A reflecting mirror which lessens light absorption and electrical losses is made up and a light emission device which is superior in strength is thus obtained. |
| 其他摘要 | 用途：构成一个反射镜，其强度足够，并且没有电，光学吸收，并且通过使单晶在电介质上生长并进行双异质结构的外延生长而保持高发光效率。组成：利用成核面7和非成核面8之间的成核密度差异，通过选择性成核工艺形成III-V族化合物半导体晶体9，如GaAs，InP等，如图所示，外延增长，例如MOCVD，LPE，MOMBE等。在上述成核过程中，在非成核面8上提供精细且具有高于非成核面的成核密度的基板7，并且其工艺使得每个单晶9生长以形成发光元件。构成了减少光吸收和电损失的反射镜，从而获得了强度优异的发光装置。 |
| 申请日期 | 1989-01-31 |
| 专利号 | JP1990201988A |
| 专利状态 | 失效 |
| 申请号 | JP1989019814 |
| 公开（公告）号 | JP1990201988A |
| IPC 分类号 | H01L33/30 | H01L33/40 | H01S5/00 | H01L33/00 | H01S3/18 |
| 专利代理人 | - |
| 代理机构 | - |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/76584 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | KAWASAKI HIDEJI. Light emission device. JP1990201988A[P]. 1990-08-10. |
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