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OPT OpenIR > 半导体激光器专利数据库

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其他题名	-
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	1970-12-04
专利权人	RCA CORPORATION
公开日期	1970-12-04
授权国家	法国
专利类型	授权发明
摘要	1283970 Electroluminescence RCA CORPORATION 19 Dec 1969 [28 March 1969] 62014/69 Heading C4S [Also in Division H1] A semi-conductor laser which may operate at room temperature comprises a body of N- type material 14, Fig. 1, containing carrier electrons in a concentration of between 1 x 1018 and 5 x 1018 cms.-3, and a body of P-type material 2 contiguous and epitaxially related with the N-type material body at an interface 16 and having an energy gap at least 0À05 electron volts higher, a diffused P-type region 18 being formed in the N-type body 14 such that a light-emitting P-N junction 20 is provided, the junction being spaced from the interface 16 by between 1À2 and 3À0 Ám corresponding to a hole concentration at the interface 16 of between 1À5 Î 1019 and 5 Î 1019 cm.-3. The N-type body 14 may be gallium arsenide and the P-type body 12 galliumaluminium arsenide, the aluminium concentration being sufficient to provide an energy gap of between 1À48 and 1À78 electron volts. Alternatively both bodies may be gallium-aluminium arsenide with the P-type body 12 having an aluminium concentration such as to produce a higher energy gap of between 1À53 and 1À78 electron volts. The laser may be formed by a tip process in which the semi-conductor body 14 forms a substrate clamped within a graphite boat mounted in a tiltable quartz furnace tube, Fig. 2 (not shown). Examples of fabrication processes are: A P+-type body 12 is formed on a silicondoped N-type single crystal substrate 14 of gallium arsenide by liquid phase epitaxial growth at a tip temperature of 930 C. from a melt consisting of gallium, 10 grams; gallium arsenide, 1À7 grams; aluminium, 12 milligrams; and zinc, 0À3 grams, the region 18 being formed by zinc diffusion. 2. A similar process is used but the melt is modified to aluminium, 6 milligrams; and zinc, 0À35 grams, the other constituents being unchanged. 3. A P+-type body 12 is formed on a tellurium-doped gallium arsenide substrate 14 by growth at a temperature of 900 C. from a melt consisting of gallium, 6 grams; gallium arsenide, 0À65 grams; aluminium 5 milligrammes; and zinc 0À20 grams. After completion of the growth operation the structure is heated with 0À007 grams of zinc arsenide to 850 C. in an evacuated chamber. 4. A body 14 and a P+-type body 12 are both formed by liquid phase epitaxy, body 12 being gallium arsenide and a layer being grown on the substrate 12 at 880 C. using a melt containing gallium, 6 grams; aluminium, 15 milligrams; and zinc, 0À20 grams. After growth the layer is lapped to a thickness of 0À001 inch, after which the body 14 is formed on the lapped surface by growth beginning at 920 C. from a melt containing gallium, 6 grams; gallium arsenide, 0À75 grams; aluminium, 3 milligrams; and tellurium, 2 milligrams. The semi-conductor may be provided with cleaved faces defining an optical resonator and includes electrodes 24, 28.
其他摘要	1283970电致发光RCA CORPORATION 1969年12月19日[1969年3月28日] 62014/69标题C4S [也在H1部分]可在室温下工作的半导体激光器包括图1所示的含有载体的N-型材料体14电子的浓度在1×10 -8 SP / 5×10×10 18 cms。 -3 之间，并且是一种P型材料2在界面16处与N型材料体连续且外延相关并且具有至少0-10电子伏特的能隙，在N型体14中形成扩散的P型区域18，使得发光PN提供连接点20，该连接点与界面16隔开1到2和3-μm之间，对应于界面16处的空穴浓度在1±5×10 19 和5×10 19 cm。 -3 。 N型体14可以是砷化镓，P型体可以是12镓镓砷化物，铝浓度足以提供电能差在1到48和1到78之间。或者，两个主体可以是砷化铝镓，其中P型主体12具有铝浓度，以便产生介于1到53和1 -78电子伏特之间的更高能隙。激光器可以通过尖端工艺形成，其中半导体本体14形成夹在安装在可倾斜石英炉管中的石墨舟皿内的基板，图2（未示出）。制造工艺的实例是：1。通过液相外延生长在930℃的尖端温度下，在砷化镓的硅化N型单晶衬底14上形成AP + 型体12。由镓组成的熔体，10克;砷化镓，1~7克;铝，12毫克;和锌，0-3克，区域18由锌扩散形成。 2.使用类似的方法，但将熔体改性为铝，6毫克;和锌，0-35克，其他成分不变。 3.P + 型主体12通过在900℃的温度下从由6g镓组成的熔体中生长，在碲掺杂的砷化镓衬底14上形成;砷化镓，0-65克;铝5毫克;和锌0-20克。在完成生长操作后，在真空室中用0-700克砷化锌将结构加热至850℃。通过液相外延形成主体14和P + 型主体12，主体12是砷化镓，并且使用含有熔体的熔体在880℃下在基板12上生长层。镓，6克;铝，15毫克;和锌，0-20克。在生长之后，将该层研磨至0-100英寸的厚度，之后通过在920℃下从含有6克镓的熔体开始生长，在研磨的表面上形成主体14;砷化镓，0-75克;铝，3毫克;和碲，2毫克。半导体可以设置有限定光学谐振器的解理面，并且包括电极24,28。
申请日期	1969-12-24
专利号	FR2033706A5
专利状态	失效
申请号	FR1969044860
公开（公告）号	FR2033706A5
IPC 分类号	H01L21/208 \| H01L33/00 \| H01S5/00 \| H01S5/30 \| H01S5/32 \| H05B33/00 \| H01S3/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/76534
专题	半导体激光器专利数据库
作者单位	RCA CORPORATION
推荐引用方式 GB/T 7714	-. -. FR2033706A5[P]. 1970-12-04.

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