Semiconductor laser and manufacture thereof

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	Semiconductor laser and manufacture thereof
其他题名	Semiconductor laser and manufacture thereof
	UENO YOSHIYASU
	1991-04-15
专利权人	日本電気株式会社
公开日期	1991-04-15
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To improve COD level by providing a resonator having a pair of cleavage planes perpendicular to the laminating plane in a multilayer film structure including a double hetero-structure of a GaInP active layer and an AlGaInP clad layer and substituting phosphorus atoms in and in the vicinity of the surface of this cleavage plane by nitrogen atoms. CONSTITUTION:In conventional laser structure, an active layer in the vicinity of a cleavage plane has no contribution to light emission and inversely serves as a light absorbing layer and generates heat and makes the main caused of COD. This phenomenon is caused by the fact that the band gap energy is substantially decreased due to the high density surface levels in the vicinity of the cleavage end plane 7. Therefore, P N substitution region 6 is provided in the vicinity of the cleavage end plane 7. The band gap energy of GaInN is sufficiently larger as compared with GaInP so that the band gap energy of the active layer in the vicinity of the end plane is made larger than the laser generated light energy and light absorption at the laser end surface is suppressed and COD light density can be improved.
其他摘要	目的：通过在多层膜结构中提供具有垂直于层压平面的一对解理面的谐振器来提高COD水平，所述多层膜结构包括GaInP有源层和AlGaInP包层的双异质结构，并取代磷原子在其中和通过氮原子在该解理面的表面附近。组成：在传统的激光器结构中，解理面附近的有源层对光发射没有贡献，反过来充当光吸收层并产生热量并使COD成为主要原因。这种现象是由于在解理端面7附近由于高密度表面水平而带隙能量显着降低的事实引起的。因此，PN解交区域6设置在解理端面7附近。与GaInP相比，GaInN的带隙能量足够大，使得端面附近的有源层的带隙能量大于激光产生的光能量，并且抑制了激光器端面处的光吸收。可以改善COD光密度。
申请日期	1989-08-31
专利号	JP1991089585A
专利状态	失效
申请号	JP1989226942
公开（公告）号	JP1991089585A
IPC 分类号	H01S5/00 \| H01S5/16 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/76416
专题	半导体激光器专利数据库
作者单位	日本電気株式会社
推荐引用方式 GB/T 7714	UENO YOSHIYASU. Semiconductor laser and manufacture thereof. JP1991089585A[P]. 1991-04-15.

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