Manufacture of semiconductor light-emitting element

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	Manufacture of semiconductor light-emitting element
其他题名	Manufacture of semiconductor light-emitting element
	MORI YOSHIHIRO; SHIBATA ATSUSHI
	1986-02-15
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1986-02-15
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable operation at high speed, and to integrate the titled light- emitting element with one or more of elements on the same base body by selectively executing impurity diffusion or etching to multilayer semiconductor layers formed onto the base body while shaping the elements to a planar form. CONSTITUTION:On a phototransistor, a layer such as an n type InP collector one 402, a layer such as a p type GaInAsP base one 403 and a layer such as an n type InP emitter one 404 are grown onto a base body such as an n type InP one 401 in an epitaxial manner in succession, and two grooves formed through chemical etching are buried by p type InP 405. Regions 406 to which an n type impurity such as sulfur is diffused are shaped to mesas on the outsides of the grooves, and electrodes 407 are formed to the upper sections of the regions 406 and used as collector electrodes. The p type InP buried layers 405 are employed as graft bases, and currents are injected to the base layer 403 by electrodes 408. An electrode 409 is shaped to an emitter layer. In the constitution, electrodes for a base, an emitter and a collector are all formed on the surfaces of elements, and the grooves are buried by the buried layers 405, thus forming the planar type element.
其他摘要	目的：通过选择性地对形成在基体上的多层半导体层执行杂质扩散或蚀刻，同时将元件成形为可以使高速运行，并将标题发光元件与一个或多个元件集成在同一基体上平面形式。组成：在光电晶体管上，诸如n型InP集电极之一的层402，诸如p型GaInAsP基极之类的层403和诸如n型InP发射极之类的层140生长到诸如n的基体上。以外延方式连续地键入InP one 401，并且通过化学蚀刻形成的两个凹槽被p型InP 405掩埋。诸如硫的n型杂质扩散到的区域406被成形为凹槽外侧的台面，电极407形成在区域406的上部，并用作集电极。 p型InP埋层405用作接枝基底，电流408通过电极408注入基层403.电极409成形为发射极层。在该结构中，用于基极，发射极和集电极的电极都形成在元件的表面上，并且凹槽被掩埋层405掩埋，从而形成平面型元件。
申请日期	1984-07-25
专利号	JP1986032585A
专利状态	失效
申请号	JP1984154350
公开（公告）号	JP1986032585A
IPC 分类号	H01L33/08 \| H01L33/14 \| H01L33/30 \| H01L33/62 \| H01S5/00 \| H01S5/042 \| H01S5/227 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/76377
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	MORI YOSHIHIRO,SHIBATA ATSUSHI. Manufacture of semiconductor light-emitting element. JP1986032585A[P]. 1986-02-15.

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