Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser | |
其他题名 | Semiconductor laser |
ASAI AKIHIKO; MAKITA KATSUO; HANAMITSU YUKIKAZU; TSUCHIYA TOSHIO; YAMAGUCHI SHIGEMI | |
1988-08-25 | |
专利权人 | アンリツ株式会社 |
公开日期 | 1988-08-25 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To lower a threshold electric current by a method wherein a mesa stripe composed of an inverted-mesa-shaped part, a vertical-shaped part and a forward-mesa-shaped part in succession is formed on a multilayer-film structure wafer which is formed by piling up semiconductor layers including an active layer. CONSTITUTION:A p-type InP clad layer 12, an n-type In1-xGaxAs1-yPy active layer 13 and an n-type InP clad layer 14 are grown in succession on a p-type InP substrate 1; after that, a belt-shaped insulating film 23 is formed. Then, an inverted-mesa-shaped part 20 is formed by a first etching process; a vertical- shaped part 21 and a forward-mesa-shaped part 22 are formed by a second etching process; after that, a p-type InP buried layer 15, an n-type InP buried layer 16 and a p-type InP buried layer 17 are grown in succession. The insulating layer 23 is removed, and an n-type electrode 18 and a p-type electrode 19 are formed. By this setup, because the active layer 13 can be made narrow, it is possible to stabilize an oscillation mode of a laser beam and to lower a threshold electric current. |
其他摘要 | 用途:通过一种方法降低阈值电流,其中在多层膜结构晶片上形成由倒置台面形部分,垂直形状部分和前向台面形状部分连续组成的台面条带。通过堆叠包括有源层的半导体层来形成。组成:p型InP包层12,n型In1-xGaxAs1-yPy有源层13和n型InP包层14在p型InP衬底1上连续生长;之后,形成带状绝缘膜23。然后,通过第一蚀刻工艺形成倒置台面形部分20;通过第二蚀刻工艺形成垂直形状部分21和前方台面形状部分22;之后,依次生长p型InP埋层15,n型InP埋层16和p型InP埋层17。去除绝缘层23,并形成n型电极18和p型电极19。通过这种设置,因为可以使有源层13变窄,所以可以稳定激光束的振荡模式并降低阈值电流。 |
申请日期 | 1987-02-23 |
专利号 | JP1988205980A |
专利状态 | 失效 |
申请号 | JP1987039596 |
公开(公告)号 | JP1988205980A |
IPC 分类号 | H01S5/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/76374 |
专题 | 半导体激光器专利数据库 |
作者单位 | アンリツ株式会社 |
推荐引用方式 GB/T 7714 | ASAI AKIHIKO,MAKITA KATSUO,HANAMITSU YUKIKAZU,et al. Semiconductor laser. JP1988205980A[P]. 1988-08-25. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1988205980A.PDF(372KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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