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OPT OpenIR > 半导体激光器专利数据库

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其他题名	-
	MITO IKUO
	1987-10-16
专利权人	NIPPON ELECTRIC CO
公开日期	1987-10-16
授权国家	日本
专利类型	授权发明
摘要	PURPOSE:To utilize the device in an optical-fiber wavelength-division multiplex- transmission system, by forming the device by integrating semiconductor lasers having several kinds of embeded heterogeneous structures whose light emitting wavelengths are different on a same substrate, so that CW oscillation can be made in each laser at a room temperature, and performing high speed modulation. CONSTITUTION:An N type InP buffer layer 2 is formed on an N type InP substrate InGaAsP active layer 3-1, 3-3, and 3-2, whose light emitting wavelengths are 2mum, 3mum, and 5mum, respectively, are sequentially layered by epitaxial growth. Then, the layers 3-1-3-3 are etched in the regions having a specified length with a photoresist as a mask so that they are exposed out of the surface. The etching is made from the left in the order of 3-1, 3-3, and 3-2, and the cycle is repeated. Thus, the stepped layered body is obtained. Then, mesa stripes are formed on the surface of each step of the layered body in the vertical direction. The surface parts of two layers are removed from the surface on which traps are not formed. Then, an N type InP current enclosing layer 6, an SiO2 film 10, and P type ohmic electrode 11-1-11-3 are formed.
其他摘要	目的：在光纤波分复用传输系统中利用该装置，通过在同一基板上集成具有几种嵌入式异质结构的半导体激光器来形成器件，这种结构的发光波长不同，因此CW振荡可以在室温下在每个激光器中制作，并进行高速调制。组成：在N型InP衬底1上形成N型InP缓冲层2.InGaAsP有源层3-1,3-3和3-2，其发光波长为2μm，3μm和5μm，分别通过外延生长依次层叠。然后，用光致抗蚀剂作为掩模在具有特定长度的区域中蚀刻层3-1-3-3，使得它们暴露在表面之外。从左侧按3-1,3-3和3-2的顺序进行蚀刻，并重复该循环。因此，获得阶梯式层状体。然后，在层叠体的每个台阶的表面上沿垂直方向形成台面条纹。从没有形成陷阱的表面上除去两层的表面部分。然后，形成N型InP电流包围层6，SiO2膜10和P型欧姆电极11-1-11-3。
申请日期	1980-05-12
专利号	JP1987048916B2
专利状态	失效
申请号	JP1980061671
公开（公告）号	JP1987048916B2
IPC 分类号	H01L21/208 \| H01S5/00 \| H01S5/227 \| H01S5/32 \| H01S5/323 \| H01S5/40
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/76305
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	MITO IKUO. -. JP1987048916B2[P]. 1987-10-16.

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JP1987048916B2.PDF（472KB）	专利		开放获取	CC BY-NC-SA	请求全文