Semiconductor device

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	Semiconductor device
其他题名	Semiconductor device
	CHIKAMURA TAKAO; MIYATA YUTAKA
	1986-07-02
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1986-07-02
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a high speed light receiving device of long size and large area and a light-emitting device with which a light of arbitrary wavelength can be emitted in a high degree of efficiency by a method wherein the first thin film, which is single crystallized by fusion and solidification, is coated on an insulated substrate, and the second compound semiconductor thin film, to be used for formation of an active element, is epitaxially grown on the first thin film. CONSTITUTION:The first thin film 11 consisting of Si, Ge or the mixed crystal of them and having low vapor pressure when it is fused, is coated on a high melting point insulative substrate 10 of SiO2, Al2O3 and the like, and a protective film 12 is coated on the exposed surface of said thin film 11 for the purpose of preventing deformation of the thin film of SiO2, Si3N4, Al2O3 and the like. Then, the film 11 is single-crystallized by irradiating the energy ray 13 of a laser beam such as Ar, ruby and the like, an electron beam, a heat ray and the like, the film 12 is removed, the second compound semiconductor thin film such as GaAs, AlAs, GaP, InAs and the like is deposited on the film 11 by performing an epitaxial growing method, and an active element is provided thereon. Through these procedures, a light source array suitable for self-light emitting type display is obtained.
其他摘要	目的：获得一种长尺寸和大面积的高速光接收装置和一种发光装置，通过一种方法可以高效率地发射任意波长的光，其中第一薄膜是单一的通过熔化和凝固结晶，将其涂覆在绝缘基板上，并且在第一薄膜上外延生长用于形成有源元件的第二化合物半导体薄膜。组成：第一个由Si，Ge或它们的混合晶体组成并在熔化时具有低蒸气压的薄膜11涂在SiO2，Al2O3等高熔点绝缘基板10和保护膜上为了防止SiO 2，Si 3 N 4，Al 2 O 3等薄膜的变形，在所述薄膜11的暴露表面上涂覆图12所示的薄膜。然后，通过照射诸如Ar，红宝石等激光束的能量射线13，电子束，热射线等使膜11单晶化，去除膜12，第二化合物半导体薄通过外延生长方法在膜11上沉积诸如GaAs，AlAs，GaP，InAs等的膜，并在其上提供有源元件。通过这些过程，获得了适用于自发光型显示器的光源阵列。
申请日期	1984-12-19
专利号	JP1986144816A
专利状态	失效
申请号	JP1984269085
公开（公告）号	JP1986144816A
IPC 分类号	H01L21/20 \| H01L31/02 \| H01L33/08 \| H01L33/28 \| H01L33/30 \| H01L33/34 \| H01S5/00 \| H01L21/324 \| H01L21/36 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/76243
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	CHIKAMURA TAKAO,MIYATA YUTAKA. Semiconductor device. JP1986144816A[P]. 1986-07-02.

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