Xi'an Institute of Optics and Precision Mechanics,CAS
Buried hetero structure semiconductor laser | |
其他题名 | Buried hetero structure semiconductor laser |
KENGU HIROYOSHI; SUGIMOTO MITSUNORI | |
1983-04-28 | |
专利权人 | NIPPON ELECTRIC CO |
公开日期 | 1983-04-28 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To obtain a semiconductor laser which has extremely small leakage current, high power and which can operate at a high temperature by interposing a semiconductor layer having sufficiently small energy gap between the emitter region and the base region of a transistor. CONSTITUTION:A leakage current is blocked by a p-n-p-n structure which is made of an upside clad layer 33, a buried layer 37, a current block layer 36, an InGaAsP layer 36, and a downside clad layer 3 The diffusion length of the minority carrier in the layers 35, 36 is approx. 10mum. Since the band gap of the layer 35 is 0.98eV smaller than 05eV, the current gain of the n-p-n transistor of the p-n-p-n structure is sufficiently smaller than 0.1 to 1 in case that the gate current exists. No breakdown of the p-n-p-n structure occurs even in the laser operation, and almost no leakage current flows. |
其他摘要 | 目的:通过在晶体管的发射极区和基极区之间插入具有足够小的能隙的半导体层,获得具有极小漏电流,高功率并且可以在高温下工作的半导体激光器。组成:漏电流被pnpn结构阻塞,pnpn结构由上侧包层33,埋层37,电流阻挡层36,InGaAsP层36和下侧包层31组成。少数扩散长度层35,36中的载体约为。 10mum。由于层35的带隙是小于05eV的0.98eV,所以在栅极电流存在的情况下,p-n-p-n结构的n-p-n晶体管的电流增益充分小于0.1比1。即使在激光器操作中也不会发生p-n-p-n结构的破坏,并且几乎没有漏电流流过。 |
申请日期 | 1981-10-23 |
专利号 | JP1983071675A |
专利状态 | 失效 |
申请号 | JP1981169486 |
公开(公告)号 | JP1983071675A |
IPC 分类号 | H01S5/00 | H01S5/227 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/76098 |
专题 | 半导体激光器专利数据库 |
作者单位 | NIPPON ELECTRIC CO |
推荐引用方式 GB/T 7714 | KENGU HIROYOSHI,SUGIMOTO MITSUNORI. Buried hetero structure semiconductor laser. JP1983071675A[P]. 1983-04-28. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1983071675A.PDF(189KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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