Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	YAMAGUCHI, MASAYUKI; MITO, IKUO; KITAMURA, MITSUHIRO
	1988-06-14
专利权人	NEC CORPORATION
公开日期	1988-06-14
授权国家	美国
专利类型	授权发明
摘要	A tunable semiconductor laser device includes a laser region and a tuning region, with a highly reflective surface formed on the cleaved vertical end facet of the tuning region for providing a reflectivity of 50% or more. The laser and tuning regions are formed on a common semiconductor substrate with the laser region having an active layer formed over the substrate, an optical waveguide layer adjacent the active layer and an electrode for carrying a drive current to the active region. The tuning region, adjacent the laser region on the substrate includes an optical waveguide which extends from the optical waveguide of the laser region, and a tuning current carrying electrode for injecting a tuning current across the waveguide layer of the tuning region. The tuning current alters the refractive index of the waveguide layer interface which changes the phase of the tuning region. Changing the tuning current varies the laser wavelength. The highly reflective end facet assures continuous wavelength tuning. The laser device may be incorporated into an integrated optical local oscillator comprising the laser device, a photodiode, a branched optical waveguide including an input port for mixing the output of the laser device and the light from the input port before being received by the photodiode.
其他摘要	可调谐半导体激光器件包括激光区域和调谐区域，在调谐区域的解理垂直端面上形成高反射表面，以提供50％或更高的反射率。激光和调谐区域形成在公共半导体衬底上，激光区域具有在衬底上形成的有源层，与有源层相邻的光波导层和用于将驱动电流传送到有源区域的电极。与基板上的激光区域相邻的调谐区域包括从激光区域的光波导延伸的光波导，以及用于在调谐区域的波导层上注入调谐电流的调谐电流承载电极。调谐电流改变波导层界面的折射率，其改变调谐区域的相位。改变调谐电流会改变激光波长。高反射端面可确保连续波长调谐。激光装置可以结合到集成光学本地振荡器中，该集成光学本地振荡器包括激光装置，光电二极管，分支光波导，其包括用于在被光电二极管接收之前混合激光装置的输出和来自输入端口的光的输入端口。
申请日期	1985-07-24
专利号	US4751710
专利状态	失效
申请号	US06/758238
公开（公告）号	US4751710
IPC 分类号	H01S5/026 \| H01S5/12 \| H01S5/00 \| H01S5/0625 \| H01S5/323 \| H01S5/227 \| H01S5/028 \| H01S3/19
专利代理人	-
代理机构	SUGHRUE,MION,ZINN,MACPEAK & SEAS
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/76091
专题	半导体激光器专利数据库
作者单位	NEC CORPORATION
推荐引用方式 GB/T 7714	YAMAGUCHI, MASAYUKI,MITO, IKUO,KITAMURA, MITSUHIRO. Semiconductor laser device. US4751710[P]. 1988-06-14.

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