Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser element | |
其他题名 | Semiconductor laser element |
SASAKI YOSHIMITSU; KAJIMURA TAKASHI; KAYANE NAOKI; NAKAMURA MICHIHARU | |
1984-10-11 | |
专利权人 | HITACHI SEISAKUSHO KK |
公开日期 | 1984-10-11 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To contrive to make assembly work efficient by facilitating the discrimination of the direction for stem mounting by a method wherein a sign, figure, and pattern, etc. discriminating one end surface are arranged on one electrode surface of the titled element. CONSTITUTION:A GaAlAs double hetero grown layer 2 is grown on an N type GaAs substrate 1, a P type electrode 3 is provided on the layer 2, and an N type electrode 4 is provided on the opposite surface of the substrate 1, thus constructing a wafer of the semiconductor laser. One electrode 3 of this wafer is coated with photo resist OMR (trade name), and exposure and development are performed by means of a photo mask having a marker 10 for discrimination, resulting in the state that only the part of the marker 10 has come off. Only the part of the marker 10 of this wafer is removed by etching, and a stripe 5 is formed by cleavage, thereby constructing the semiconductor laser 1 When the laser 11 is built on the stem 24, it is mounted between a low reflection film 21 and a high reflection film 22 on a sub-mount 23 according to the marker 10, and accordingly the assembly work is improved. |
其他摘要 | 目的:通过一种方法,通过一种方法来区分一个端面的标志,图形和图案等,以便在标题元件的一个电极表面上设置方法,从而设法使装配工作有效。组成:在N型GaAs衬底1上生长GaAlAs双异质生长层2,在层2上提供P型电极3,在衬底1的相对表面上提供N型电极4,从而构建半导体激光器的晶片。该晶片的一个电极3涂有光致抗蚀剂OMR(商品名),并且通过具有用于识别的标记10的光掩模进行曝光和显影,导致仅标记物10的一部分已经到来的状态关闭。通过蚀刻仅去除该晶片的标记10的一部分,并通过解理形成条纹5,从而构成半导体激光器1当激光器11构建在杆24上时,它安装在低反射膜之间如图21所示,根据标记10在子底座23上设置高反射膜22,因此改善了组装工作。 |
申请日期 | 1983-03-30 |
专利号 | JP1984178786A |
专利状态 | 失效 |
申请号 | JP1983052408 |
公开(公告)号 | JP1984178786A |
IPC 分类号 | H01S5/00 | H01S5/022 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/75851 |
专题 | 半导体激光器专利数据库 |
作者单位 | HITACHI SEISAKUSHO KK |
推荐引用方式 GB/T 7714 | SASAKI YOSHIMITSU,KAJIMURA TAKASHI,KAYANE NAOKI,et al. Semiconductor laser element. JP1984178786A[P]. 1984-10-11. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1984178786A.PDF(134KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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