Semiconductor light emitting device

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	Semiconductor light emitting device
其他题名	Semiconductor light emitting device
	HIGUCHI HIDEYO; NAGAI SEIICHI; OOMURA ETSUJI
	1985-01-25
专利权人	MITSUBISHI DENKI KK
公开日期	1985-01-25
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To stably realize the virtual reflection factor by a method wherein a first film, whose film thickness is lambda/4 of the oscillation wavelength and refractive index is n1, is adhered on one end surface of the resonator mirror of a luminescent element and a second film, whose film thickness is lambda/4 as well and refractive index is n2 smaller than the n1, is adhered thereon. CONSTITUTION:This semiconductor luminescent device has been so constituted that non- reflected films 3 and 4 of two layers, whose film thicknesses t3 and t4 are respectively lambda/4 of the oscillation wavelength, are coated by an electron beam evaporation instead if conventional non-reflected films and the relation between the refractive indexes n3 and n4 of the non-reflected films 3 and 4 is n3>n4. The edge-reflection factor R becomes the minimal value when the film thicknesses t3 and t4 are lambda/4. According to this device constituted in such a way, when the non-reflected films 3 and 4 of n3=3.2 and n4=45 are used for lambda-8,000Angstrom , the edge-reflection factor R becomes R=2.2% and an almost same edge-reflection factor as in the case of a non-reflected film 2 of one layer, whose film thickness is lambda/4 of the oscillation wavelength, made of an Al2O3 can be realized, thereby enabling to improve remarkably the noise characteristics in case there is a return light. The film of n3=3.2 and the film of n4=45 can be realized by successively coating an alpha-Si (amorphous silicon) and an SiO2 according to an electron beam evaporation.
其他摘要	用途：通过一种方法稳定地实现虚拟反射系数，其中膜厚度为振荡波长λ/ 4且折射率为n1的第一膜粘附在发光元件的谐振器镜的一个端面上，并且第二膜的膜厚度也是λ/ 4，折射率比n1小n2，它附着在其上。组成：这种半导体发光器件的构成使得两层的非反射薄膜3和4，其薄膜厚度t3和t4分别是振荡波长的λ/ 4，用电子束蒸发涂覆，如果传统的非反射膜和非反射膜3和4的折射率n3和n4之间的关系是n3> n4。当膜厚度t3和t4是λ/ 4时，边缘反射系数R变为最小值。根据以这种方式构成的这种装置，当n3 = 3.2和n4 = 45的非反射膜3和4用于λ-8,000埃时，边缘反射系数R变为R = 2.2％并且几乎相同如在一层的非反射膜2的情况下，可以实现由Al2O3制成的膜厚度为振荡波长的λ/ 4的边缘反射因子，从而能够显着改善噪声特性。是一盏返回灯。通过根据电子束蒸发连续涂覆α-Si（非晶硅）和SiO 2，可以实现n3 = 3.2和n4 = 45的膜。
申请日期	1983-07-05
专利号	JP1985014489A
专利状态	失效
申请号	JP1983122922
公开（公告）号	JP1985014489A
IPC 分类号	H01L33/10 \| H01L33/30 \| H01L33/46 \| H01S5/00 \| H01S5/028 \| H01S3/18 \| H01L33/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/75786
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KK
推荐引用方式 GB/T 7714	HIGUCHI HIDEYO,NAGAI SEIICHI,OOMURA ETSUJI. Semiconductor light emitting device. JP1985014489A[P]. 1985-01-25.

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