Semiconductor laser element

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	Semiconductor laser element
其他题名	Semiconductor laser element
	HAYAKAWA TOSHIROU; MIYAUCHI NOBUYUKI; YANO MORICHIKA
	1984-01-28
专利权人	SHARP KK
公开日期	1984-01-28
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To reduce the influence of stress generated according to mounting, and to obtain the GaAlAs semiconductor laser element by a method wherein an active layer in a multilayer crystal is formed separating by the prescribed distances or more respectively from the mounting face and a face on the opposite side from the mounting face. CONSTITUTION:After a current limiting N type GaAs layer 9 of 1mum thickness is made to grow on a P type GaAs substrate 1, a V-shaped groove 10 to reach the substrate 1 is processed by etching. A P type clad layer 2 of 0.15mum thickness. the active layer 3 of 0.1mum thickness, an N type clad layer 4 of 1mum thickness, and an N type GaAs cap layer 5 of 40mum thickness are laminated in order thereon. After the GaAs substrate 1 is processed to 70mum thickness by etching, an electrode 11 on the P-side is formed, and moreover after an electrode 12 on the N-side is formed by evaporation on the cap layer 5, the device is mounted on a copper heat sink. By separating the active layer from the mounting face by 35% or more of element thickness, or by 18% or more from the opposite face, stress generated according to mounting can be reduced, and long life can be obtained.
其他摘要	目的：减少因安装产生的应力的影响，并通过一种方法获得GaAlAs半导体激光器元件，其中多层晶体中的有源层分别与安装面和面上的预定距离或更远的距离分开形成安装面的另一侧。组成：在1 Mum厚度的限流N型GaAs层9生长在P型GaAs衬底1上之后，通过蚀刻处理到达衬底1的V形凹槽10。厚度为0.15μm的P型覆层2。在其上依次层叠0.1μm厚的有源层3,1μm厚的N型覆盖层4和40μm厚的N型GaAs盖层5。在通过蚀刻将GaAs衬底1加工成70μm厚度之后，形成P侧的电极11，此外，在盖层5上通过蒸发形成N侧的电极12之后，将器件安装在铜散热片。通过将有源层与安装面分开35％或更多的元件厚度，或者从相对面分离18％或更多，可以减少根据安装产生的应力，并且可以获得长寿命。
申请日期	1982-07-20
专利号	JP1984017292A
专利状态	失效
申请号	JP1982127302
公开（公告）号	JP1984017292A
IPC 分类号	H01S5/00 \| H01S5/02 \| H01S5/024 \| H01S5/24 \| H01S5/323 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/75630
专题	半导体激光器专利数据库
作者单位	SHARP KK
推荐引用方式 GB/T 7714	HAYAKAWA TOSHIROU,MIYAUCHI NOBUYUKI,YANO MORICHIKA. Semiconductor laser element. JP1984017292A[P]. 1984-01-28.

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