Xi'an Institute of Optics and Precision Mechanics,CAS
| Semiconductor laser device | |
| 其他题名 | Semiconductor laser device |
| HATAGOSHI GENICHI; ISHIKAWA MASAYUKI; OKUDA HAJIME; SHIOZAWA HIDEO; UEMATSU YUTAKA | |
| 1989-09-18 | |
| 专利权人 | 株式会社東芝 |
| 公开日期 | 1989-09-18 |
| 授权国家 | 日本 |
| 专利类型 | 发明申请 |
| 摘要 | PURPOSE:To make the thickness of a double hetero-structure section the most adequate by a method wherein the thickness of an active layer is set to be within the range where a specific condition toward a specific refractivity difference determined by refractivities of the active layer and a clad layer and an oscillating wavelength is satisfied. CONSTITUTION:A semiconductor laser device is provided with a double hetero- structure composed of an In(Ga1-XAlX) active layer 12 and two In(Ga1-YAlY)P clad layer (0, with reference to a specific refractivity difference, DELTA=(na-nc)2na, and an oscillating wavelength lambda is satisfied, and moreover it is more desirable that d is so set as to satisfy an equality, d/lambda 0.022DELTA. By these processes, the rise of the threshold current density can be limited to the extent which can be negligible, so that an InGaAlP semiconductor laser low in a threshold value can be realized. |
| 其他摘要 | 目的：通过以下方法使双异质结构部分的厚度最为合适：其中活性层的厚度设定在这样的范围内，其中特定条件朝向由有源层的折射率确定的比折射率差，满足包层和振荡波长。结构：半导体激光器件具有由In（Ga1-XAlX）有源层12和两个In（Ga1-YAlY）P包层（0 |
| 申请日期 | 1988-03-14 |
| 专利号 | JP1989232787A |
| 专利状态 | 失效 |
| 申请号 | JP1988059908 |
| 公开（公告）号 | JP1989232787A |
| IPC 分类号 | H01S5/00 | H01S3/18 |
| 专利代理人 | - |
| 代理机构 | - |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/75576 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | HATAGOSHI GENICHI,ISHIKAWA MASAYUKI,OKUDA HAJIME,et al. Semiconductor laser device. JP1989232787A[P]. 1989-09-18. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| JP1989232787A.PDF（369KB） | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 | ||
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