Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser device | |
其他题名 | Semiconductor laser device |
HATAGOSHI GENICHI; ISHIKAWA MASAYUKI; OKUDA HAJIME; SHIOZAWA HIDEO; UEMATSU YUTAKA | |
1989-09-18 | |
专利权人 | 株式会社東芝 |
公开日期 | 1989-09-18 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To make the thickness of a double hetero-structure section the most adequate by a method wherein the thickness of an active layer is set to be within the range where a specific condition toward a specific refractivity difference determined by refractivities of the active layer and a clad layer and an oscillating wavelength is satisfied. CONSTITUTION:A semiconductor laser device is provided with a double hetero- structure composed of an In(Ga1-XAlX) active layer 12 and two In(Ga1-YAlY)P clad layer (0, with reference to a specific refractivity difference, DELTA=(na-nc)2na, and an oscillating wavelength lambda is satisfied, and moreover it is more desirable that d is so set as to satisfy an equality, d/lambda 0.022DELTA. By these processes, the rise of the threshold current density can be limited to the extent which can be negligible, so that an InGaAlP semiconductor laser low in a threshold value can be realized. |
其他摘要 | 目的:通过以下方法使双异质结构部分的厚度最为合适:其中活性层的厚度设定在这样的范围内,其中特定条件朝向由有源层的折射率确定的比折射率差,满足包层和振荡波长。结构:半导体激光器件具有由In(Ga1-XAlX)有源层12和两个In(Ga1-YAlY)P包层(0 |
申请日期 | 1988-03-14 |
专利号 | JP1989232787A |
专利状态 | 失效 |
申请号 | JP1988059908 |
公开(公告)号 | JP1989232787A |
IPC 分类号 | H01S5/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/75576 |
专题 | 半导体激光器专利数据库 |
作者单位 | 株式会社東芝 |
推荐引用方式 GB/T 7714 | HATAGOSHI GENICHI,ISHIKAWA MASAYUKI,OKUDA HAJIME,et al. Semiconductor laser device. JP1989232787A[P]. 1989-09-18. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1989232787A.PDF(369KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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