Semiconductor light emitting device

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	Semiconductor light emitting device
其他题名	Semiconductor light emitting device
	SATO SHIRO
	1988-06-16
专利权人	RICOH CO LTD
公开日期	1988-06-16
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To make it possible to take out an optical output yielded in a light emitting region as a high luminous output in a direction perpendicular to a substrate, by surrounding the upper and lower parts of a region in an active layer, which emits light, with p-type and n-type clad layers, and surrounding the outer surface part with a p-type high concentration impurity region. CONSTITUTION:On an n-type semiconductor substrate 101, an n-type semiconductor clad layer 102, a semiconductor active layer 103 and a p-type semiconductor clad layer are laminated. An approximately cylindrical protruding part 121 is formed in the direction perpendicular to the substrate on the main surface of the substrate. A part of the n-type semiconductor clad layer 102, the semiconductor active layer 103 and a p-type semiconductor clad layer 104 are formed in the protruding part. When impurities for forming p-type are diffused in the protruding part through the side surface of the protruding part, a p-type region 105 is formed around the outer surface part of the protruding cylinder. The upper and lower parts of a region 108, which emits light from the active layer 103, are surrounded with the clad layers 104 and 102. The outer surface part of the cylinder 121 is surrounded with the high concentration impurities yielding p-type.
其他摘要	用途：通过围绕发光的有源层区域的上部和下部，可以将在发光区域产生的光输出作为垂直于基板的方向的高发光输出取出，具有p型和n型覆层，并且用p型高浓度杂质区围绕外表面部分。组成：在n型半导体衬底101上，层叠n型半导体覆层102，半导体有源层103和p型半导体覆层。在基板的主表面上沿垂直于基板的方向形成近似圆柱形的突出部分121。在突出部分中形成n型半导体覆层102的一部分，半导体有源层103和p型半导体覆层104。当用于形成p型的杂质通过突出部分的侧表面在突出部分中扩散时，在突出圆柱体的外表面部分周围形成p型区域105。从有源层103发射光的区域108的上部和下部被包层104和102围绕。圆柱121的外表面部分被高浓度杂质包围，产生p型。
申请日期	1986-12-08
专利号	JP1988143889A
专利状态	失效
申请号	JP1986290594
公开（公告）号	JP1988143889A
IPC 分类号	H01L33/06 \| H01L33/08 \| H01L33/10 \| H01L33/14 \| H01L33/24 \| H01L33/28 \| H01L33/32 \| H01L33/40 \| H01S5/00 \| H01S5/18 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/74913
专题	半导体激光器专利数据库
作者单位	RICOH CO LTD
推荐引用方式 GB/T 7714	SATO SHIRO. Semiconductor light emitting device. JP1988143889A[P]. 1988-06-16.

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