Semiconductor light-emitting device

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	Semiconductor light-emitting device
其他题名	Semiconductor light-emitting device
	YOSHIDA TOMOAKI; SAITO TETSUO; SATO SHIRO; INABA FUMIO; ITO HIROMASA; AZUMI JUNICHI
	1990-03-26
专利权人	INABA FUMIO
公开日期	1990-03-26
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a semiconductor light-emitting element and a semiconductor laser having excellent current injection efficiency and a high radiant power output by forming a current block layer substantially in parallel with the main surface on a substrate and a recessed section shaped substantially vertically to the main surface on the substrate and forming a P-N junction mainly onto the side face of the recessed section. CONSTITUTION:A semiconductor substrate 101, a light-emitting layer, which is shaped to the main surface of the semiconductor substrate 101, has a P-N junction 108 and emits light in the direction substantially vertical to said main surface in the vicinity of the P-N junction 108, a current block layer 130, in which a semiconductor light-emitting device with electrodes 106, 107 injecting currents to the light-emitting layer is formed substantially in parallel with said main surface on the substrate 101, and a recessed section 140 formed substantially vertically to said main surface to a laminating section on the substrate 101 are provided, and the P-N junction 108 is formed along the side face of the recessed section 140. The cylindrical recessed section 140 is shaped to an N-type GaAs epitaxial layer 102, and Zn, etc., are diffused to the internal side face of the recessed section 140 and a P-type diffusion region 131 is formed.
其他摘要	目的：通过在基板上形成与主表面基本平行的电流阻挡层和基本垂直于基板垂直形成的凹陷部分，获得具有优异电流注入效率和高辐射功率输出的半导体发光元件和半导体激光器。基板上的主表面并且主要在凹陷部分的侧面上形成PN结。组成：半导体基板101，一个发光层，其形状与半导体基板101的主表面，具有PN结108，并在PN结附近的基本垂直于所述主表面的方向上发光接下来，如图108所示，电流阻挡层130，其中具有向发光层注入电流的电极106,107的半导体发光器件基本上与基板101上的所述主表面平行地形成，并且基本上形成凹陷部分140。所述主表面垂直于所述基板101上的层压部分，并且所述PN结108沿所述凹陷部分140的侧面形成。所述圆柱形凹陷部分140成形为N型GaAs外延层102， Zn和Zn等扩散到凹部140的内侧面，形成P型扩散区域131。
申请日期	1988-01-13
专利号	JP1990084785A
专利状态	失效
申请号	JP1988003862
公开（公告）号	JP1990084785A
IPC 分类号	H01L27/15 \| H01L33/06 \| H01L33/08 \| H01L33/10 \| H01L33/14 \| H01L33/24 \| H01L33/30 \| H01L33/58 \| H01S5/00 \| H01S5/18 \| H01S5/42 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/74827
专题	半导体激光器专利数据库
作者单位	INABA FUMIO
推荐引用方式 GB/T 7714	YOSHIDA TOMOAKI,SAITO TETSUO,SATO SHIRO,et al. Semiconductor light-emitting device. JP1990084785A[P]. 1990-03-26.

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