Semiconductor light emitting device

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	Semiconductor light emitting device
其他题名	Semiconductor light emitting device
	KAKIMOTO, SYOICHI
	1989-12-19
专利权人	MITSUBISHI DENKI KABUSHIKI KAISHA, 2-3, MARUNOUCHI 2-CHOME, CHIYODA-KU, TOKYO JAPAN
公开日期	1989-12-19
授权国家	美国
专利类型	授权发明
摘要	A buried stripe semiconductor light emitting device and a method for producing the device in which the buried stripe functions as an internal resonator, and the device has window regions interposed between the resonator and facets on the external surface of the device. A first phase crystal growth is conducted in which a first cladding layer is grown on a doped substrate. Thereafter, a doped stripe of impurities is introduced into the first cladding layer in electrical contact with the doped substrate. The doped stripe extends longitudinally but terminates short of the facets so that later out-diffusion from the doped stripe will form the window regions. A second phase crystal growth is then conducted which buries the doped stripe internal to the semiconductor, i.e., not projecting through any external surface. The second phase crystal growth comprises an active layer, a second cladding layer and a contact layer successively grown on the first cladding layer. Impurities from the buried doped stripe are out-diffused into the active layer to the boundary between the active layer and the seocnd cladding layer to form the resonator, leaving windows interposed between the resonator ends and the facets.
其他摘要	埋入条纹半导体发光器件和制造该器件的方法，其中埋入的条纹用作内部谐振器，并且该器件具有插入在谐振器和器件外表面上的小平面之间的窗口区域。进行第一相晶体生长，其中在掺杂衬底上生长第一包层。此后，将掺杂的杂质条带引入第一包层，与掺杂的基板电接触。掺杂条纹纵向延伸但终止于小平面之外，以便随后从掺杂条纹向外扩散将形成窗口区域。然后进行第二相晶体生长，其将掺杂条纹埋在半导体内部，即不穿过任何外表面突出。第二相晶体生长包括有源层，第二包层和在第一包层上连续生长的接触层。来自掩埋掺杂条纹的杂质向外扩散到有源层中，到达有源层和第二层包层之间的边界，以形成谐振器，留下插入在谐振器端和小平面之间的窗口。
申请日期	1988-07-08
专利号	US4888782
专利状态	失效
申请号	US07/216832
公开（公告）号	US4888782
IPC 分类号	H01L33/00 \| H01S5/00 \| H01S5/16 \| H01S5/20 \| H01S3/19
专利代理人	-
代理机构	LEYDIG,VOIT & MAYER
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/74806
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA, 2-3, MARUNOUCHI 2-CHOME, CHIYODA-KU, TOKYO JAPAN
推荐引用方式 GB/T 7714	KAKIMOTO, SYOICHI. Semiconductor light emitting device. US4888782[P]. 1989-12-19.

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