Semiconductor laser element and manufacture thereof

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	Semiconductor laser element and manufacture thereof
其他题名	Semiconductor laser element and manufacture thereof
	TANAKA TOSHIAKI; ONO YUICHI; KONO TOSHIHIRO; KAJIMURA TAKASHI
	1990-04-23
专利权人	HITACHI LTD
公开日期	1990-04-23
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To make it possible to obtain the intended characteristics of a semicon ductor laser stably in a crystal growing by inserting an etching stopping layer at the intermediate upper part of an active layer so that the desired film thick ness remains, and performing the control of the thickness of a light guide layer with excellent reproducibility. CONSTITUTION:On an n-type semiconductor substrate 1, the following layers are sequentially laminated: an n-type buffer layer 2; an n-type clad layer 3; an undoped active layer 4; a p-type clad layer 5; an etching stopping layer 7 having a thickness of 5-20 nm as an AlxGa1-xAs (0-5X10cm and a film thickness of 0.05-0.2mum which holds the layer 7; a p-type clad layer 8; and a p-type gap layer 9. A mask is used, and etching is performed down to the stopping layer 7. Heat treatment is performed, Disorganization of the composition is performed between the stopping layer 7 and the light guide alayer. An n-type block layer 10, a p-type gap layer 11, and then electrodes 12 and 13 are evaporated. Then, the device is cut into elements.
其他摘要	目的：通过在有源层的中间上部插入蚀刻停止层，使得能够稳定地在晶体生长中获得半导体激光器的预期特性，从而保持所需的膜厚度，并进行控制。光导层的厚度具有优异的再现性。组成：在n型半导体衬底1上，顺序层叠下列层：n型缓冲层2; n型覆层3;未掺杂的有源层4; p型包层5;厚度为5-20nm的蚀刻停止层7作为Al x Ga 1-x As（0 <= x <= 0.1）层，其Al组分低于上部光导层;高浓度的纯度高的掺杂包层6，其杂质浓度为5×10 18 -5×10 19 cm -3，膜厚度为0.05-0.2μm，保持层7; p型包层8;使用掩模，并且向下执行蚀刻至停止层7.进行热处理，在停止层7和光导层之间进行组合物的解体。然后蒸发n型阻挡层10，p型间隙层11，然后蒸发电极12和13。然后，将设备切割成元件。
申请日期	1988-10-19
专利号	JP1990109387A
专利状态	失效
申请号	JP1988261485
公开（公告）号	JP1990109387A
IPC 分类号	H01L21/203 \| H01S5/00 \| H01S5/065 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/74532
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	TANAKA TOSHIAKI,ONO YUICHI,KONO TOSHIHIRO,et al. Semiconductor laser element and manufacture thereof. JP1990109387A[P]. 1990-04-23.

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