Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser | |
其他题名 | Semiconductor laser |
SHIBUYA TAKAO; ITO KUNIO; SHIMIZU YUICHI | |
1987-04-21 | |
专利权人 | MATSUSHITA ELECTRIC IND CO LTD |
公开日期 | 1987-04-21 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To improve reliability in high temperature operation by making clad layers contain impurity element which has a deep level not contributing to electrical conduction. CONSTITUTION:Impurity element which has a deep level not contributing to electrical conduction is contained in a clad layer. For instance, an N-type GaAs current blocking layer 2, the Zn doped P-type Al0.5Ga0.5As 1st clad layer 3, a nondoped Al0.1Ga0.9As active layer 4, the Te doped N-type Al0.5Ga0.5As 2nd clad layer 5 and a Te doped N-type GaAs contact layer 6 are formed on a P-type GaAs substrate Impurity element Cu, which does not contribute to electrical conduction, is contained in the 1st and 2nd cladding layers 3 and 5 with concentration of 2X10cm. With this constitution, multiplication of crystal defects growth in the semiconductor laser is suppressed by the impurity element and deterioration of the semiconductor laser can be avoided so that, even in the operation at high temperature, high reliability can be obtained. |
其他摘要 | 用途:通过使包层含有深度不影响导电的杂质元素来提高高温操作的可靠性。组成:包层中包含的杂质元素具有无助于电传导的深层次。例如,N型GaAs电流阻挡层2,Zn掺杂的P型Al0.5Ga0.5As第一包层3,非掺杂的Al0.1Ga0.9As有源层4,Te掺杂的N型Al0.5Ga0。如图5所示,在P型GaAs衬底1上形成第二覆层5和Te掺杂的N型GaAs接触层6.在第一和第二覆层3中包含对导电无贡献的杂质元素Cu。浓度为2×1016cm-3的浓度为5的溶液。利用这种结构,可以避免杂质元素抑制半导体激光器中晶体缺陷生长的增加,并且可以避免半导体激光器的劣化,从而即使在高温操作中也可以获得高可靠性。 |
申请日期 | 1985-10-11 |
专利号 | JP1987086785A |
专利状态 | 失效 |
申请号 | JP1985227122 |
公开(公告)号 | JP1987086785A |
IPC 分类号 | H01S5/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/74341 |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
推荐引用方式 GB/T 7714 | SHIBUYA TAKAO,ITO KUNIO,SHIMIZU YUICHI. Semiconductor laser. JP1987086785A[P]. 1987-04-21. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1987086785A.PDF(169KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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