Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser element | |
其他题名 | Semiconductor laser element |
YAMAMOTO SABURO; SASAKI KAZUAKI; KONDO MASAKI; SUYAMA NAOHIRO; KONDO MASAFUMI | |
1990-11-20 | |
专利权人 | SHARP CORP |
公开日期 | 1990-11-20 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To provide a semiconductor laser element having low noise characteristic, low oscillation threshold value current for generating a self-excited oscillation by providing high resistance buried layers on both side faces of a stripelike first mesa including an active region, and light absorption layers at both sides of a stripelike second mesa to become a current injection path. CONSTITUTION:A substrate 1 of a semiconductor laser element does not have a groove, but is formed with crystalline layers 10 used to absorb a light of an active layer 3 immersed through a clad layer 4 and to stop a current at both sides of a current injection stripe mesa 14. With the element of such a configuration, the current injection inner stripe 14 is formed in a self-alignment manner with the center on the surface of a mesa stripe 15, and its width (w) can be very narrowed to approx. 1mum by selectively etching from both sides. Further, since the stripe 14 is formed directly above the layer 4, a current extension to the layer 3 can be reduced. |
其他摘要 | 目的:提供一种具有低噪声特性,低振荡阈值电流的半导体激光器元件,用于通过在包括有源区的条状第一台面的两个侧面上提供高电阻掩埋层来产生自激振荡,并且在以下处提供光吸收层条纹状第二台面的两侧成为当前的注入路径。组成:半导体激光元件的基板1没有凹槽,但形成有结晶层10,用于吸收浸没在包层4中的有源层3的光并在电流的两侧停止电流利用这种结构的元件,电流注入内条14以自对准方式形成,其中心位于台面条15的表面上,并且其宽度(w)可以非常窄到约。通过从两侧选择性蚀刻1mum。此外,由于条纹14直接形成在层4上方,因此可以减少对层3的电流延伸。 |
申请日期 | 1989-01-13 |
专利号 | JP1990283083A |
专利状态 | 失效 |
申请号 | JP1989006773 |
公开(公告)号 | JP1990283083A |
IPC 分类号 | H01S5/00 | H01S5/065 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/74313 |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP CORP |
推荐引用方式 GB/T 7714 | YAMAMOTO SABURO,SASAKI KAZUAKI,KONDO MASAKI,et al. Semiconductor laser element. JP1990283083A[P]. 1990-11-20. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1990283083A.PDF(348KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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