Manufacture of semiconductor laser

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	Manufacture of semiconductor laser
其他题名	Manufacture of semiconductor laser
	UCHIDA MAMORU
	1991-02-12
专利权人	NEC CORP
公开日期	1991-02-12
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent generation of lattice defect and distortion and deterioration of characteristics by forming a non-absorbing region for the laser light on the end surface and controlling this region so as to be not larger than a predetermined value in the vicinity of the end surface. CONSTITUTION:An n-type AlGaAs clad layer 102, a quantum well active layer 103, a p-type AlGaAs clad layer 104, a p-type cap layer 105 are formed on an n-type GaAs substrate 101 through molecular beam epitaxial growth process which is excellent in controlling film thickness. A coating 106, with desired reflectivity, is applied onto the end surface of a resonator of a semiconductor laser having a quantum well structure in the active layer 103, and it is further coated with another higher reflective material coat 107. Then, after continuous drive for a predetermined period of time by a current larger than the oscillation threshold value, only the coat 107 is removed and a non-absorbing region for the laser light is formed. This region can be controlled so as to be not larger than 3mum, and the fault such as generation of lattice defect and distortion and deterioration of characteristics can be prevented without exerting an influence upon the waveguide mechanism.
其他摘要	用途：通过在端面上形成激光的非吸收区域并控制该区域使其不大于端面附近的预定值，以防止产生晶格缺陷和变形以及特性劣化。组成：通过分子束外延生长工艺在n型GaAs衬底101上形成n型AlGaAs包层102，量子阱有源层103，p型AlGaAs包层104，p型盖层105这在控制薄膜厚度方面是极好的。将具有所需反射率的涂层106施加到在有源层103中具有量子阱结构的半导体激光器的谐振器的端面上，并且其进一步涂覆有另一个更高反射材料涂层107.然后，在连续驱动之后通过大于振荡阈值的电流在预定时间段内，仅去除涂层107并形成用于激光的非吸收区域。该区域可以被控制为不大于3μm，并且可以防止诸如晶格缺陷的产生和变形以及特性劣化的缺陷，而不会对波导机构产生影响。
申请日期	1989-06-29
专利号	JP1991032084A
专利状态	失效
申请号	JP1989167464
公开（公告）号	JP1991032084A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/74301
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	UCHIDA MAMORU. Manufacture of semiconductor laser. JP1991032084A[P]. 1991-02-12.

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